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Influence of Momentary Annealing on the Nanoscale Surface Morphology of Room Temperature Pulsed Laser Deposited NiO(111) Epitaxial Thin Films on Atomically Stepped Sapphire (0001) Substrates

Published online by Cambridge University Press:  18 March 2013

Ryosuke Yamauchi ,
Geng Tan ,
Daishi Shiojiri ,
Nobuo Tsuchimine ,
Koji Koyama ,
Satoru Kaneko ,
Akifumi Matsuda  and
Mamoru Yoshimoto
Ryosuke Yamauchi
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502, Japan
Geng Tan
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502, Japan
Daishi Shiojiri
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502, Japan
Nobuo Tsuchimine
Affiliation:
Toshima Manufacturing Co., Ltd., Higashimatsuyama, Saitama 355-0036, Japan
Koji Koyama
Affiliation:
Namiki Precision Jewel Co., Ltd., Adachi, Tokyo 123-8511, Japan
Satoru Kaneko
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502, Japan Kanagawa Industrial Technology Center, Ebina, Kanagawa 243-0435, Japan
Akifumi Matsuda
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502, Japan
Mamoru Yoshimoto
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Abstract

We examined the influence of momentary annealing on the nanoscale surface morphology of NiO(111) epitaxial thin films deposited on atomically stepped sapphire (0001) substrates at room temperature in O2 at 1.3 × 10−3 and 1.3 × 10−6 Pa using a pulsed laser deposition (PLD) technique. The NiO films have atomically flat surfaces (RMS roughness: approximately 0.1–0.2 nm) reflecting the step-and-terrace structures of the substrates, regardless of the O2 deposition pressure. After rapid thermal annealing (RTA) of the NiO(111) epitaxial film deposited at 1.3 × 10−3 Pa O2, a periodic straight nanogroove array related to the atomic steps of the substrate was formed on the film surface for 60 s. In contrast, the fabrication of a transient state in the nanogroove array formation was achieved with RTA of less than 1 s. However, when the O2 atmosphere during PLD was 1.3 × 10−6 Pa, random crystal growth was observed and resulted in a disordered rough surface nanostructure after RTA.

Keywords

filmannealingmorphology
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1507: Symposium AA – Oxide Nanoelectronics and Multifunctional Dielectrics , 2013 , mrsf12-1507-aa09-11
Copyright
Copyright © Materials Research Society 2013

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