Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-24T20:59:08.921Z Has data issue: false hasContentIssue false
  • English
  • Français

The Influence of Local Ambient Atmosphere on the Electroluminescent Stability of Porous Silicon Diodes

Published online by Cambridge University Press:  28 February 2011

Libing Zhang ,
Jeffery L. Coffer ,
Bruce E. Gnade ,
DaXue Xu  and
Russell F. Pinizzotto
Libing Zhang
Affiliation:
Department of Chemistry, Texas Christian University, Fort Worth, TX, 76129
Jeffery L. Coffer
Affiliation:
Department of Chemistry, Texas Christian University, Fort Worth, TX, 76129
Bruce E. Gnade
Affiliation:
Central Research Laboratories, Texas Instruments Inc., Dallas, TX, 75265
DaXue Xu
Affiliation:
Center for Materials Characterization, University of North Texas, Denton, TX, 76203
Russell F. Pinizzotto
Affiliation:
Center for Materials Characterization, University of North Texas, Denton, TX, 76203
Get access

Abstract

In this work, the influence of surrounding ambient atmosphere on the stability of electroluminescent (EL) porous Si (PS) diodes fabricated from anodic oxidation of epitaxially grown p-type layers on n-type Si substrates is investigated. These structures are characterized using photoluminescence (PL), electroluminescence (EL), and infrared (IR) spectrosopies, as well as scanning electron microscopy (SEM). Such structures yield orange emission with maxima near 620 nm upon the application of moderate applied voltages (3-7 V). In strong oxidizing environments, EL intensity degrades completely within 30 minutes; in contrast, the integrated intensity remains essentially unchanged in the same timeframe in the presence of a vigorous flow of inert gases such as nitrogen and argon. Infrared spectroscopic studies strongly suggest that electroluminescence degradation is related to porous silicon surface oxidation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 671
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Canham, L.T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
2 Richter, A., Steiner, P., Kozlowski, F., Lang, W., IEEE Electron Device Lett. 12, 691 (1991)Google Scholar
3 Koshida, N., Koyama, H. Appl. Phys. Lett. 60, 347 (1992)Google Scholar
4 Steiner, P., Kozlowski, F., and Lang, W., Appl. Phys. Lett., 62, 2700 (1993).Google Scholar
5 Koshida, N., Koyama, H., Yamamoto, Y., Collins, C., Appl. Phys. Lett., 63, 2655 (1993).Google Scholar
6 Li, K., Diaz, D., He, Y., Campbell, J. C., Tsai, C., Appl. Phys. Lett., 64, 2394 (1994).Google Scholar
7 Namavar, F., Maruska, H., Kalkhoran, N., Appl. Phys. Lett., 60, 2514 (1992).Google Scholar
8 Tsai, C., Li, K.-H., Sarathy, J., Shih, S., Campbell, J.C., Hance, B., and White, J.M., Appl. Phys. Lett. 59, 2814 (1991).Google Scholar