Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-25T05:43:46.965Z Has data issue: false hasContentIssue false
  • English
  • Français

Influence of Intrinsic Defects and Strain on Electronic Reliability of Gate Oxide films

Published online by Cambridge University Press:  01 February 2011

Ken Suzuki ,
Yuta Ito  and
Hideo Miura
Ken Suzuki
Affiliation:
[email protected], Tohoku University, Fracture and Reliability Research Institute, Graduate School of Engineering,, 6-6-11-716 Aoba, Aramaki, Aoba-ku,, Sendai, N/A, 980-8579, Japan
Yuta Ito
Affiliation:
[email protected], Tohoku University, Fracture and Reliability Research Institute, Graduate School of Engineering, 6-6-11-716 Aoba, Aramaki, Aoba-ku, Sendai, N/A, 980-8579, Japan
Hideo Miura
Affiliation:
[email protected], Tohoku University, Fracture and Reliability Research Institute, Graduate School of Engineering, 6-6-11-716 Aoba, Aramaki, Aoba-ku, Sendai, N/A, 980-8579, Japan
Get access

Abstract

The effect of strain and intrinsic defects on both electronic and structural characteristics of HfO2-x used for sub-100-nm semiconductor devices was analyzed by a quantum chemical molecular dynamics analysis. The magnitude of the band gap of HfO2 decreases by about 10% under the applied strain. The stable crystallographic structure of the monoclinic HfO2 changes to a cubic-like structure under the strain. The magnitude of the band gap of the HfO2-x decreases drastically from 5.7 eV to about 1.0 eV due to the formation of an electronic state within the band gap when an oxygen vacancy is introduced to the perfect HfO2. In the HfO2-x film, oxygen atoms near the oxygen vacancy can move drastically at temperatures higher than 800 K. Therefore, it is very important to control the chemical composition of the hafnium oxide film and to optimize the annealing condition to maintain both the high reliability and performance of the gate oxide film.

Keywords

devicesdefectssimulation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 917: Symposium E – Gate Stack Scaling – Materials Selection, Role of Interfaces, and Reliability Implications , 2006 , 0917-E05-28
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Maserjian, J. and Zamani, N., J. Vac. Sci. Technol. 20, 743 (1982).Google Scholar
2 Olivo, P., Nguyen, T., and Ricco, B., IEEE Trans. Electron Devices, ED–35, 2259 (1988).Google Scholar
3 Miura, H. and Ikeda, S., IEICE Trans. on Electronics, E82–C, No. 6, 830 (1999).Google Scholar
4 Moriya, H., Iwasaki, T., and Miura, H., Ext. Abs. of the 2002 Int. Conf. on Solid State Devices and Materials, 186 (2002).Google Scholar
5 Yamada, A., Endou, A., Takabe, H., Teraishi, K., Ammal, S. S. C., Kubo, M., Nakamura, K. G., Kitajima, M., and Miyamoto, A., Jpn, J. Appl. Phys. 38, 2434 (1999).Google Scholar
6 Suzuki, K., Kuroiwa, Y., Takami, S., Kubo, M., Miyamoto, A., and Imamura, A., Solid State Ionics, 152–153, 273 (2002).Google Scholar
7 Elanany, M., Selvam, P., Yokosuka, T., Takami, S., Kubo, M., Imamura, A., and Miyamoto, A., J. Phys. Chem. B, 107, 1518 (2003).Google Scholar
8 Suzuki, K., Takeda, Y., Lu, Z., and Shoji, T., Proceeding of International Congress on Advances in Nuclear Power Plants, CD-ROM, Paper No. 4227 (2004).Google Scholar
9 Verlet, L., Phys. Rev. 159, 98–103 (1967).Google Scholar
10 Ewald, P. P., Ann. Phys. 64, 253 (1921).Google Scholar
11 Moriya, H., Iwasaki, T., and Miura, H., Proceeding of International Conference on Simulation of Semiconductor Process and Devices, 331–334 (2005).Google Scholar
12 Zhao, X. and Vanderbilt, D., Proceeding of the 2002 MRS Fall Meeting, 745, p. N7.2.1.Google Scholar
13 Pemmaraju, C. D. and Sanvito, S., Phys. Rev. Lett., 94, 217205 (2005).Google Scholar
14 Takeuchi, H., Wong, H. Y., Ha, D., and King, T., IEDM Tech. Dig., 829 (2004).Google Scholar