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The Influence of HBr Discharge Ambience on Poly-Si/SiO2 Etching Selectivity

Published online by Cambridge University Press:  16 February 2011

E. Ikawa ,
K. Tokashiki ,
T. Kikkawa ,
Y. Teraoka  and
I. Nishiyama
E. Ikawa
Affiliation:
Microelectronics Research Labs., NEC Corp. 1120, Shimokuzawa, Sagamihara, Kanagawa 229 Japan
K. Tokashiki
Affiliation:
Microelectronics Research Labs., NEC Corp. 1120, Shimokuzawa, Sagamihara, Kanagawa 229 Japan
T. Kikkawa
Affiliation:
Microelectronics Research Labs., NEC Corp. 1120, Shimokuzawa, Sagamihara, Kanagawa 229 Japan
Y. Teraoka
Affiliation:
Opto-electronics Research Labs., NEC Corp. 34, Miyukigaoka, Tsukuba, Ibaragi, 305, Japan
I. Nishiyama
Affiliation:
Opto-electronics Research Labs., NEC Corp. 34, Miyukigaoka, Tsukuba, Ibaragi, 305, Japan
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Abstract

The influence of HBr discharge ambience on SiO2 etching is investigated. A batch type parallel-plate reactive ion etching (RIE) dry etcher was used. The discharge ambience was changed by changing the numbers of poly-Si and SiO2 wafers in the same chamber. It is found that as the number of poly-Si wafers increased, the poly-Si etch rate slightly decreased due to a loading effect and SiO2 etching rate drastically increased. The selectivity of poly-Si / SiO2 decreased with increasing the ratio of the loaded poly-Si number in the same chamber. When A12O3 wafers instead of poly-Si wafers were loaded with SiO2 substrates, SiO2 etching rate enhancement did not occur. Therefore, increase of SiO2 etch rate could not be explained using a loading effect. From the results of mass analysis during etching in Si contained HBr plasma, etching products SiBrx (x=1,2,3) peaks were observed. Namely, when the Si etching products were supplied to SiO2 surface, SiO2 etch rate increased. In order to suppress the enhancement of SiO2 etch rate, the etch temperature must be reduced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 223: Symposium E – Low Energy Ion Beam and Plasma Modification of Materials , 1991 , 255
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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