Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-12T22:15:35.178Z Has data issue: false hasContentIssue false
  • English
  • Français

The Influence of Growth Temperature on Oxygen Concentration in GaN Buffer Layer

Published online by Cambridge University Press:  01 February 2011

Ewa Dumiszewska ,
Wlodek Strupinski ,
Piotr Caban ,
Marek Wesolowski ,
Dariusz Lenkiewicz ,
Rafal Jakiela ,
Karolina Pagowska ,
Andrzej Turos  and
Krzysztof Zdunek
Ewa Dumiszewska
Affiliation:
[email protected], Institute of Electronic Materials Technology, III-V Epitaxy Department, Wolczynska 133, Warsaw, 01-919, Poland, +48 835 30 41 ext. 136, 48 22 846 54 96
Wlodek Strupinski
Affiliation:
[email protected], Institute of Electronic Materials Technology, III-V Epitaxy Department, Wolczynska 133, Warsaw, 01-919, Poland
Piotr Caban
Affiliation:
[email protected], Institute of Electronic Materials Technology, III-V Epitaxy Department, Wolczynska 133, Warsaw, 01-919, Poland
Marek Wesolowski
Affiliation:
[email protected], Institute of Electronic Materials Technology, III-V Epitaxy Department, Wolczynska 133, Warsaw, 01-919, Poland
Dariusz Lenkiewicz
Affiliation:
[email protected], Institute of Electronic Materials Technology, III-V Epitaxy Department, Wolczynska 133, Warsaw, 01-919, Poland
Rafal Jakiela
Affiliation:
[email protected], Institute of Electronic Materials Technology, III-V Epitaxy Department, Wolczynska 133, Warsaw, 01-919, Poland
Karolina Pagowska
Affiliation:
[email protected], Soltan Institute for Nuclear Studies, Swierk/Otwock, 05-400, Poland
Andrzej Turos
Affiliation:
[email protected], Institute of Electronic Materials Technology, III-V Epitaxy Department, Wolczynska 133, Warsaw, 01-919, Poland
Krzysztof Zdunek
Affiliation:
[email protected], Warsaw University of Technology, Faculty of Materials Science, Woloska 141, Warsaw, 02-507, Poland
Get access

Abstract

The influence of growth temperature on oxygen incorporation into GaN epitaxial layers was studied. GaN layers deposited at low temperatures were characterized by much higher oxygen concentration than those deposited at high temperature typically used for epitaxial growth. GaN buffer layers (HT GaN) about 1 μm thick were deposited on GaN nucleation layers (NL) with various thicknesses. The influence of NL thickness on crystalline quality and oxygen concentration of HT GaN layers were studied using RBS and SIMS. With increasing thickness of NL the crystalline quality of GaN buffer layers deteriorates and the oxygen concentration increases. It was observed that oxygen atoms incorporated at low temperature in NL diffuse into GaN buffer layer during high temperature growth as a consequence GaN NL is the source for unintentional oxygen doping.

Keywords

nitrideOepitaxy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1068: Symposium C – Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates , 2008 , 1068-C03-09
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Walle, C. G. Van de, Neugebauer, J. J. Appl. Phys. 95, 3851 (2004).Google Scholar
[2] Hawkridge, M.E. Cherns, D. Appl. Phys. Lett. 87, 221903 (2005).Google Scholar
[3] Hawkridge, M. E. Cherns, D. Myers, T. Appl. Phys. Lett. 89, 251915 (2006).Google Scholar
[4] Popovici, G. Kim, W. Botchkarev, A. et al. , Appl. Phys. Lett. 71, 3385 (1997).Google Scholar
[5] Chung, B.C., Gershenzon, M. J. Appl. Phys. 72, 651 (1992).Google Scholar
[6] Liliental–Weber, Z., Chen, Y. Ruvimov, S. et al. , Phys. Rev. Lett. 79, 2835 (1997).Google Scholar
[7] Cherns, D. Jiao, C. G. Mokhtari, H. Cai, J. and Ponce, F. A. phys. stat. sol. (b) 234, 924 (2002).Google Scholar
[8] Dumiszewska, E. Strupiñski, W., Zdunek, K. J. of Superhard Materials 29, 174 (2007).Google Scholar
[9] Feldman, L.C. Mayer, J.W.: Ion Channeling in Materials Science, Academic Press, New York 1984 Google Scholar
[10] Nowicki, L. Turos, A. Ratajczak, R. Stonert, A. and Garrido, F. Nucl.Instr. and Meth. B240, 277 (2005).Google Scholar
[11] Pearton, S. J. Cho, H. LaRoche, J. R. et al. , Appl. Phys. Lett. 75, 2939 (1999).Google Scholar