Hostname: page-component-745bb68f8f-5r2nc Total loading time: 0 Render date: 2025-01-27T02:50:04.784Z Has data issue: false hasContentIssue false
  • English
  • Français

Influence of growth parameters on the nitrogen incorporation in 4H- and 6H-SiC epilayers grown by hot-wall chemical vapour deposition

Published online by Cambridge University Press:  15 March 2011

U. Forsberg ,
A. Henry ,
Ö. Danielsson ,
M.K. Linnarsson  and
E. Janzén
U. Forsberg
Affiliation:
Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, SwedenTel: +46 (0) 13 28 26 99, Fax:+46 (0) 14 23 37, email: [email protected]
A. Henry
Affiliation:
Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, SwedenTel: +46 (0) 13 28 26 99, Fax: +46 (0) 14 23 37
Ö. Danielsson
Affiliation:
Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, SwedenTel: +46 (0) 13 28 26 99, Fax:+46 (0) 14 23 37, email: [email protected]
M.K. Linnarsson
Affiliation:
Solid State Electronics, Royal Institute of Technology, SE-164 40 Kista, Sweden
E. Janzén
Affiliation:
Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, SwedenTel: +46 (0) 13 28 26 99, Fax: +46 (0) 14 23 37
Get access

Abstract

We have investigated the nitrogen incorporation dependency on temperature, pressure, C/Si ratio and growth rate in a horizontal hot-wall CVD reactor. The incorporation mechanism for 4H- and 6H-SiC both for Si- and C-face material is presented. A comparison with previously published results in a cold-wall reactor is also made.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 637: Symposium E – Microphotonics-Materials, Physics, and Applications , 2000 , E3.10
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Forsberg, U., Henry, A., Danielsson, Ö., Rorsman, N., Eriksson, J., Wahab, Q., Storasta, L., Linnarsson, M.K. and Janzén, E., Conference paper MRS Boston 2000 Google Scholar
2. Ekvi System 3.01 from Svensk EnergiData, Nolang, B., Dept. Of Inorganic Chemistry, Uppsala University, Sweden Google Scholar
3. Private conversation with Larsson, K. and Olander, J., Uppsala University, SwedenGoogle Scholar
4. Lofgren, P.M., Ji, W., Hallin, C. and Gu, C.-Y., Journal of The Electrochemical Society, 147 (1) pp 164–175, (2000)Google Scholar
5. Larkin, D.J., Neudeck, P.G., Powell, J. A. and Matus, L.G., Appl. Phys. Lett. 65 (13), pp 1659–1661, 1994 Google Scholar
6. Kimoto, T., Itoh, A. and Matsunami, H., Appl. Phys. Lett. 67 (16), pp 2385–2387, 1995 Google Scholar