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Influence of Growth Orientation and Uniaxial Stress on the Electronic Properties of GaAs / GaAlAs Quantum Wells

Published online by Cambridge University Press:  25 February 2011

N. Saidi ,
K. Zitouni  and
A. Kadri
N. Saidi
Affiliation:
Microoptoelectronic Laboratory, Institut of Physics, Universty of Es-Snia, ORAN ALGERIA
K. Zitouni
Affiliation:
Microoptoelectronic Laboratory, Institut of Physics, Universty of Es-Snia, ORAN ALGERIA
A. Kadri
Affiliation:
Microoptoelectronic Laboratory, Institut of Physics, Universty of Es-Snia, ORAN ALGERIA
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Abstract

Using the envelope function formalism and the effective mass thecry, we have studied the E(k) energy dispersion and the confinement energies of the lower lying conduction band and the higher lying valence bands states in GaAs /GaAlAs Single Qantum Well (SQW) structures grown on GaAs substrates with different orientations of the growth axis :(001),(111),and (113). Then, the valence subbands dispersions are calculated away from the zone center for a given well width and under uniaxial stress for the three different growth directions

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 179
Copyright
Copyright © Materials Research Society 1993

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References

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