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Published online by Cambridge University Press: 25 February 2011
Using the envelope function formalism and the effective mass thecry, we have studied the E(k) energy dispersion and the confinement energies of the lower lying conduction band and the higher lying valence bands states in GaAs /GaAlAs Single Qantum Well (SQW) structures grown on GaAs substrates with different orientations of the growth axis :(001),(111),and (113). Then, the valence subbands dispersions are calculated away from the zone center for a given well width and under uniaxial stress for the three different growth directions