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The Influence of Frequency and Pressure on the Material Quality of PECVD A-SI:H

Published online by Cambridge University Press:  15 February 2011

W.G.J.H.M. Van Sark ,
J. Bezemer ,
E. M. B. Heller ,
M. Kars  and
W. F. Van Der Weg
W.G.J.H.M. Van Sark
Affiliation:
Department of Atomic and Interface Physics, Debye Institute, Universiteit Utrecht, P.O. Box 80.000, NL-3508 TA Utrecht, the Netherlands
J. Bezemer
Affiliation:
Department of Atomic and Interface Physics, Debye Institute, Universiteit Utrecht, P.O. Box 80.000, NL-3508 TA Utrecht, the Netherlands
E. M. B. Heller
Affiliation:
Department of Atomic and Interface Physics, Debye Institute, Universiteit Utrecht, P.O. Box 80.000, NL-3508 TA Utrecht, the Netherlands
M. Kars
Affiliation:
Department of Atomic and Interface Physics, Debye Institute, Universiteit Utrecht, P.O. Box 80.000, NL-3508 TA Utrecht, the Netherlands
W. F. Van Der Weg
Affiliation:
Department of Atomic and Interface Physics, Debye Institute, Universiteit Utrecht, P.O. Box 80.000, NL-3508 TA Utrecht, the Netherlands
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Abstract

A systematic study of material quality has been performed for a-Si:H layers deposited by plasma enhanced chemical vapour deposition at frequencies between 30–80 MHz. The effect of frequency variation was studied in combination with the variation of pressure and power density. The process conditions were optimised not only for ‘device quality’ opto-electronic properties but also for a uniformity in layer thickness better than 5 %. For every frequency an optimum pressure exists for which the properties of the deposited layer satisfy the ‘device quality’ requirements. A clear correlation is observed between the transition from the so-called α- to the γ-regime of the plasma and the dependence of the deposition rate γd with pressure pand frequency ƒ: γ d ∝ pƒ2/3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 3
Copyright
Copyright © Materials Research Society 1995

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References

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