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Influence of design parameters on dark current of vertically integrated a-Si:H diodes.

Published online by Cambridge University Press:  01 February 2011

C. Miazza ,
N. Wyrsch ,
G. Choong ,
S. Dunand ,
C. Ballif ,
A. Shah ,
N. Blanc ,
F. Lustenberger ,
R. Kaufmann  and
M. Despeisse
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C. Miazza
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Breguet 2, 2000 Neuchâtel, Switzerland
N. Wyrsch
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Breguet 2, 2000 Neuchâtel, Switzerland
G. Choong
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Breguet 2, 2000 Neuchâtel, Switzerland
S. Dunand
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Breguet 2, 2000 Neuchâtel, Switzerland
C. Ballif
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Breguet 2, 2000 Neuchâtel, Switzerland
A. Shah
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Breguet 2, 2000 Neuchâtel, Switzerland
N. Blanc
Affiliation:
CSEM SA, Badenerstrasse 569, P.O. Box, 8048 Zurich, Switzerland
F. Lustenberger
Affiliation:
CSEM SA, Badenerstrasse 569, P.O. Box, 8048 Zurich, Switzerland
R. Kaufmann
Affiliation:
CSEM SA, Badenerstrasse 569, P.O. Box, 8048 Zurich, Switzerland
M. Despeisse
Affiliation:
CERN, CERN Meyrin, 1211 Geneva 23, Switzerland.
P. Jarron
Affiliation:
CERN, CERN Meyrin, 1211 Geneva 23, Switzerland.
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Abstract

Image and particle sensors based on thin film on CMOS (TFC) technology, where a-Si:H detectors are vertically integrated on top of a CMOS chip, basically provide high sensitivity and low dark current densities (Jdark). However, as shown in previous work and as confirmed by the actual measurements, Jdark values depend on the topology of the chip and on the detector structure used.

The present paper describes a systematic study carried out, both with test structures on glass and also with a dedicated CMOS test chip designed by CERN. The increase in Jdark is shown to be related to border effects, and especially on the detailed structure of the pixel periphery. In all cases, lower Jdark are obtained when one uses metal-i-p instead of n-i-p configuration detectors. Transferring these results to the standard TFC sensors used by them, the authors have obtained values of Jdark as low as 20 pA/cm2 at -1 V reverse bias.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 869: Symposium D – Materials, Integration and Technology for Monolithic Instruments , 2005 , D1.2
Copyright
Copyright © Materials Research Society 2005

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