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Influence of Current Injection into a-Sin:H Films on Charge Trapping Defects

Published online by Cambridge University Press:  26 February 2011

Tomoki Oku ,
Kiyoshi Kawabata ,
Yukio Higaki ,
Teruhito Matsui ,
Hirozo Takano  and
Mutsuyuki Otsubo
Tomoki Oku
Affiliation:
Optoelectronic and Microwave Devices R&D Laboratory, Mitsubishi Electric Corporation, 4–1 Mizuhara, Itami, Hyogo 664, Japan
Kiyoshi Kawabata
Affiliation:
Optoelectronic and Microwave Devices R&D Laboratory, Mitsubishi Electric Corporation, 4–1 Mizuhara, Itami, Hyogo 664, Japan
Yukio Higaki
Affiliation:
Optoelectronic and Microwave Devices R&D Laboratory, Mitsubishi Electric Corporation, 4–1 Mizuhara, Itami, Hyogo 664, Japan
Teruhito Matsui
Affiliation:
Optoelectronic and Microwave Devices R&D Laboratory, Mitsubishi Electric Corporation, 4–1 Mizuhara, Itami, Hyogo 664, Japan
Hirozo Takano
Affiliation:
Optoelectronic and Microwave Devices R&D Laboratory, Mitsubishi Electric Corporation, 4–1 Mizuhara, Itami, Hyogo 664, Japan
Mutsuyuki Otsubo
Affiliation:
Optoelectronic and Microwave Devices R&D Laboratory, Mitsubishi Electric Corporation, 4–1 Mizuhara, Itami, Hyogo 664, Japan
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Abstract

The degradation mechanism of a-SiN:H films under current injection is investigated. It is shown that the degradation of a-SiN:H films is closely related to the hole trapping into Si-Si, Si-H, and Si0 defects. It is presumably concluded that the hole trapping centers are the Si-Si defects in the valence band tail. We estimate that the hole trapping cross-section is nearly equal to 10−20cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 209: Symposium K – Defects in Materials , 1990 , 487
Copyright
Copyright © Materials Research Society 1991

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References

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