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Influence of Chemical-Mechanical Polishing Process on Time Dependent Dielectric Breakdown Reliability of Cu/Low-k Integration

Published online by Cambridge University Press:  31 January 2011

Yohei Yamada  and
Nobuhiro Konishi
Yohei Yamada
Affiliation:
[email protected], Hitachi, Ltd., Micro Device Division, Ome-shi, Japan
Nobuhiro Konishi
Affiliation:
[email protected], Hitachi, Ltd., Micro Device Division, Ome-shi, Japan
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Abstract

The effects of defects caused by Cu chemical-mechanical polishing (CMP) on time-dependent dielectric breakdown (TDDB) in a damascene structure incorporating a low-k interlevel dielectric layer were investigated experimentally. Comb line capacitor structures were prepared with one of three types of defects (rough Cu surface corrosion, Cu depletion, or crevice corrosion) and stressed at 3.2 to 6.2 MV/cm at 140°C. The first two defects had an insignificant effect on the TDDB characteristics while crevice corrosion at the edges of wires significantly degraded them. Investigation of the effects of Cu oxidation during post-CMP cleaning on the TDDB characteristics revealed that the formation of a non-uniform oxide layer accompanying deionized water rinsing was due to the dissolution of Cu oxide during the post-CMP cleaning process. When a barrier metal slurry containing a soluble inhibitor was used, non-uniform oxide formation on the Cu surfaces during post-CMP cleaning degraded the TDDB characteristics. These results demonstrate the importance of uniform Cu oxidation during post-CMP cleaning for improving the TDDB characteristics.

Keywords

CMPcorrosionoxidation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1157: Symposium E – Science and Technology of Chemical Mechanical Planarization (CMP) , 2009 , 1157-E05-02
Copyright
Copyright © Materials Research Society 2009

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