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Influence of Arsenic Clustering and Precipitation on the Interstitial and Vacancy Concentration in Silicon

Published online by Cambridge University Press:  21 March 2011

R. Brindos ,
M. H. Clark ,
K. S. Jones ,
M. Griglione ,
Hans-J. Gossmann ,
A. Agarwal ,
B. Murto  and
E. Andideh
R. Brindos
Affiliation:
SWAMP Center, Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611-6130
M. H. Clark
Affiliation:
SWAMP Center, Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611-6130
K. S. Jones
Affiliation:
SWAMP Center, Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611-6130
M. Griglione
Affiliation:
Agere Systems, Orlando, FL 32819
Hans-J. Gossmann
Affiliation:
Agere Systems, Orlando, FL 32819
A. Agarwal
Affiliation:
Eaton Corporation, Beverly, MA 01915
B. Murto
Affiliation:
International SEMATECH, Austin, TX 78741
E. Andideh
Affiliation:
Intel Corporation, Portland Technology Development, 5200 NE Elam Young Parkway, Hillsboro, OR 97124
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Abstract

The point defect injection from arsenic precipitation was studied using boron marker layers and antimony doped superlattices. Comparisons of arsenic and germanium amorphizing implants showed similar boron marker layer diffusion enhancements after spike annealing. The results indicate that the end of range damage caused by the implants was the source of the diffusion enhancement. Additional annealing cycles showed that there was retardation in the diffusion enhancement of the boron marker layers for precipitation range arsenic implants. Antimony marker layers showed no diffusion enhancement due to vacancy injection. The results of the experiments indicate that arsenic-interstitial complexes are the cause of the decrease flux of interstitials to the bulk.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 669: Symposium J – Si Front-End Processing–Physics and Technology of Dopant-Defect Interactions III , 2001 , J5.7
Copyright
Copyright © Materials Research Society 2001

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References

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