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Influence of Al Thin Film Properties on Wire Bondability of Semiconductor

Published online by Cambridge University Press:  26 February 2011

M. Kobayashi ,
J. Hirota ,
N. Watanabe  and
K. Machida
M. Kobayashi
Affiliation:
Mitsubishi Electric Corp., Amagasaki, Hyogo, Japan
J. Hirota
Affiliation:
Mitsubishi Electric Corp., Amagasaki, Hyogo, Japan
N. Watanabe
Affiliation:
Mitsubishi Electric Corp., Amagasaki, Hyogo, Japan
K. Machida
Affiliation:
Mitsubishi Electric Corp., Amagasaki, Hyogo, Japan
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Abstract

It is required for the reliable semiconductor to control high junction quality in wire bonding.

It is expected that the Al film properties may considerably affect the junction quality. Yamamoto et al. studied the effects of Al film properties on the bondability in wire bonding by thermocompression bonding system, and disclosed that the breakability of oxide film on the Al is a key factor. [1]

In this report, effects of fabrication condition, properties and bond-ability of Al thin film were investigated in wire bonding by thermosonic bonding system. As a result, it has clarified that concentration of impurities in the Al film is an extremely influential factor for the stability of adhesion and the expansion of alloying region in the junction boundary, that is, for the improvement of junction quality.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 793
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

[1] Yamamoto, et al, Bulletin of Japan Electronic Materials Society Vol. 10 No. 1 (1979)Google Scholar
[2] Kodama JWS Meeting on Micro Joing, MJ-6–83.Google Scholar