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Individualization and Electrical Characterization of SiGe Nanowires

Published online by Cambridge University Press:  11 January 2012

M. Monasterio ,
A. Rodríguez ,
T. Rodríguez  and
C. Ballesteros
M. Monasterio
Affiliation:
Tecnología Electrónica, Universidad Politécnica de Madrid, E.T.S.I.T., 28040 Madrid, Spain
A. Rodríguez
Affiliation:
Tecnología Electrónica, Universidad Politécnica de Madrid, E.T.S.I.T., 28040 Madrid, Spain
T. Rodríguez
Affiliation:
Tecnología Electrónica, Universidad Politécnica de Madrid, E.T.S.I.T., 28040 Madrid, Spain
C. Ballesteros
Affiliation:
Física, Universidad Carlos III, 28911 Leganés (Madrid), Spain
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Abstract

SiGe nanowires of different Ge atomic fractions up to 15% were grown and ex-situ n-type doped by diffusion from a solid source in contact with the sample. The phenomenon of dielectrophoresis was used to locate single nanowires between pairs of electrodes in order to carry out electrical measurements. The measured resistance of the as-grown nanowires is very high, but it decreases more than three orders of magnitude upon doping, indicating that the doping procedure used has been effective.

Keywords

nanostructuresemiconductingdopant
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1408: Symposium BB – Functional Nanowires and Nanotubes , 2012 , mrsf11-1408-bb10-06
Copyright
Copyright © Materials Research Society 2012

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References

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