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Indium-Carbon Co-Implantation in GaAs

Published online by Cambridge University Press:  26 February 2011

J. H. Madok  and
N. M. Haegel
J. H. Madok
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles
N. M. Haegel
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles
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Abstract

We report on the formation of p+ layers in GaAs by the co-implantation of indium with carbon. Sheet hole concentrations of 2E14 cm−2 were achieved. The co-implant acts to create stoichiometric disturbances and to increase VAs concentration, allowing the C to occupy the vacant As lattice sites. The effect of In on the stoichiometry of the implanted layer was investigated. It was found that addition of 0.1–1% of a group III ion had the effect of shifting the effective As fraction toward the Ga-rich region, thus altering the crystal stoichiometry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 817
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Cunningham, B. T. et al, Appl. Phys. Lett., 55, 7, 687 (1989)CrossRefGoogle Scholar
2. Paulson, W. M. and Tam, G. The Characteristics of Carbon Implants into Semi-Insulating GaAs, (1984)Google Scholar
3. Pearton, S. J. and Abernathy, C. R., Appl. Phys. Lett., 55, 7, 678, (1989)CrossRefGoogle Scholar
4. Mita, Y., et al, Jpn. J. Appl. Phys., Suppl, 22–1, 405, (1983)CrossRefGoogle Scholar
5. Hyuga, F. et al, Appl. Phys. Lett., 50, 22, 1593, (1987)CrossRefGoogle Scholar
6. Christel, L. A. and Gibbons, J. F., J. Appl. Phys., 52., 8, 5050, (1981).CrossRefGoogle Scholar
7. Kirkpatrick, C. G., et al, in Semiconductors and Semimetals, Vol. 20, edited by Willardson, R. K. and Beer, A. C. (Academic Press, Inc., New York, 1984), p. 159.Google Scholar
8. Solov'eva, E. V., Fiz. Tekh. Poluprovodn, 15, 2141, (1981) [Sov. Phys. Semicond., 15, 11, 1243, (1981).Google Scholar
9. Rytova, N. S., Fiz. Tekh. Plouprovodn, 16, 1491, (1982) [Sov. Phys. Semicond., 16, 8, 951, (1982).Google Scholar