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Increasing The Dark Conductivity Activation Energy in Undoped Microcrystalline Silicon by Post-Growth Anneals

Published online by Cambridge University Press:  17 March 2011

Jong-Hwan Yoon
Jong-Hwan Yoon*
Affiliation:
Department of Physics, College of Natural Sciences, Kangwon National University, Chunchon, Kangwon-do 200-701, KOREA
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Abstract

Undoped µc-Si:H film of the strong n-type character with the dark conductivity activation energy of about 0.28 eV was annealed. Annealing was carried out by slowly increasing the temperature from 25 °C to 450 °C at a constant rate of 12 °C/min (one annealing cycle). Annealing effects were monitored by measuring the changes in dark conductivity, oxygen and hydrogen concentrations, and photoluminescence (PL). Dark conductivity activation energy gradually increases with increasing the number of annealing cycles to a saturation value of about 0.6 eV. There is little or no change in the oxygen concentration, but the hydrogen concentration decreases with increasing the number of annealing cycles. The PL band near 1.2 eV disappears with annealing, while the low energy PL band near 0.85 eV dominates rather as the number of annealing cycles increases. A possible explanation will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A23.6
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Meier, J., Flückiger, R., Keppner, H., and Shah, A., Appl. Phys. Lett. 65 (1994) 860.10.1063/1.112183Google Scholar
2. Fejfar, A., Beck, N., Stuchlíková, H., Wyrsch, N, Torres, P., Meier, J., Shah, A., and Kocka, J., J. Non-Cryst. Solids 227&230 (1998) 1006.Google Scholar
3. Torres, P., Meier, J., Flückiger, R., Kroll, U.. Selvan, J. A. Anna, Keppner, H., Shah, A., Littlewood, S. D., Kelly, I. E., and Giannoulés, P., Appl. Phys. Lett. 69 (1996) 1373.10.1063/1.117440Google Scholar
4. Flückiger, R., Meier, J., Goetz, M., and Shah, A., J. Appl. Phys. 77 (1995) 712.Google Scholar
5. Platz, R. and Wagner, S., Appl. Phys. Lett. 73 (1998) 1236.10.1063/1.122138Google Scholar
6. Lucovsky, G., Wang, C., Williams, M. J., Chen, Y. L., and Maher, D. M., Mater. Res. Soc. Proc. 283 (1993) 443.10.1557/PROC-283-443Google Scholar
7. Wang, C. and Lucovsky, G., Proceeding of 21st IEEE PVSEC (IEEE, New York, 1990), p. 1614.Google Scholar
8. Carius, R., Finger, F., Backhausen, U., Luysberg, M., Hapke, P., Houben, L., Otte, M., and Overhof, H., Mater. Res. Soc. Proc. 467 (1997) 283.Google Scholar
9. Yue, G., Lorentzen, J.D., Lin, J., and Han, Daxing, Appl. Phys. Lett. 75, 492 (1999).Google Scholar
10. Brehme, S., Kanschat, P. K., and Fuhs, W., Mater. Res. Soc. Proc. 609 (2000).Google Scholar