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The Increased Response Time in Hydrogenated Microcrystalline Silicon - A Fermi Level Effect or a Structural Effect in a Grainy Material?

Published online by Cambridge University Press:  10 February 2011

S. Grebner ,
P. Popovic ,
J. Furlan ,
Q. Gu  and
R. Schwarz
S. Grebner
Affiliation:
Physics Department E16 (amg), Technical University of Munich, D-85747 Garching, FR Germany
P. Popovic
Affiliation:
Faculty of Electrical Engeneering, University of Ljubljana, 61000 Ljubljana, Slovenia
J. Furlan
Affiliation:
Faculty of Electrical Engeneering, University of Ljubljana, 61000 Ljubljana, Slovenia
Q. Gu
Affiliation:
Physics Department, Syracuse University, Syracuse, NY 13244-1130, USA
R. Schwarz
Affiliation:
Physics Department E16 (amg), Technical University of Munich, D-85747 Garching, FR Germany
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Abstract

The typical photocurrent decay time τR in intrinsic prepared hydrogenated microcrystalline silicon (μc-Si:H) is around lms similar to its n-doped amorphous counterpart (a-Si:H:P). Depending on the crystalline fraction Xc, the μc-Si:H films show an activation energy near to or below 0.5eV. To find out if this analogy ofτR could be due to a Fermi level shift or to the grainy structure in gc-Si:H films, we have studied the behaviour of τR in doped a-Si:H and gc-Si:H films of different XC. One-dimensional numerical simulation based on the Multiple Trapping Model (MTM) can explain this increase in terms of a Fermi level shift towards the conduction band. On the other hand, detailed measurements for temperatures from 100 to 400 K point to carrier trapping in deep states, most probably located at grain boundaries.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 795
Copyright
Copyright © Materials Research Society 1996

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