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InAs Island Quantum Box Formation and Vertical Self-Organization on GaAs (100) Via Molecular Beam Epitaxy

Published online by Cambridge University Press:  15 February 2011

Qianghua Xie ,
N. P. Kobayashi ,
T. R. Ramachandran ,
A. Kalburge ,
P. Chen  and
A. Madhukar
Qianghua Xie
Affiliation:
Photonic Materials and Devices Laboratory, Department of Materials Science, University of Southern California, Los Angeles, CA 90089-0241
N. P. Kobayashi
Affiliation:
Photonic Materials and Devices Laboratory, Department of Materials Science, University of Southern California, Los Angeles, CA 90089-0241
T. R. Ramachandran
Affiliation:
Photonic Materials and Devices Laboratory, Department of Materials Science, University of Southern California, Los Angeles, CA 90089-0241
A. Kalburge
Affiliation:
Photonic Materials and Devices Laboratory, Department of Materials Science, University of Southern California, Los Angeles, CA 90089-0241
P. Chen
Affiliation:
Photonic Materials and Devices Laboratory, Department of Materials Science, University of Southern California, Los Angeles, CA 90089-0241
A. Madhukar
Affiliation:
Photonic Materials and Devices Laboratory, Department of Materials Science, University of Southern California, Los Angeles, CA 90089-0241
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Abstract

In-situ, ultra high vacuum combined scanning tunneling microscope/atomic force microscope (STM/AFM) studies were undertaken to examine the initiation of 3D InAs islands on GaAs (100) and their density and size distribution as a function of growth conditions. A decreasing island density with increasing As4 pressure is observed and points to the significance of strain in affecting In migration and As4 incorporation. A stack of InAs islands separated by GaAs spacer layers exhibit a vertically self-organized growth. Through analysis of a phenomenological model, this is shown to be a consequence of a directional In adatom migration caused by the islandinduced nonuniform strain fields.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 177
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Leonard, D., Krishnamurthy, M., Reaves, C. M., Denbaars, S. P., and Petroff, P. M., Appl. Phys. Lett. 63, 3203 (1993).Google Scholar
2. Marzin, J.-Y., Gerard, J. -M., Izreal, A., Barrier, D., and Bastard, G., Phys. Rev. Lett. 73, 716 (1994).Google Scholar
3. Xie, Q., Chen, P., Kalburge, A., Ramachandran, T. R., Nayfonov, A., Konkar, A., and Madhukar, A., J. Crystal Growth (in press).Google Scholar
4. Guha, S., Madhukar, A., and Rajkumar, K. C., Appl. Phys. Lett. 57, 2110 (1990).Google Scholar
5. Chen, P., Xie, Q., Madhukar, A., Chen, Li, and Konkar, A., J. Vac. Sci. Technol. B 12, 2568 (1994).Google Scholar
6. Moison, J. M., Houzay, F., Barthe, F., Leprince, L., Andre, E., and Vatel, O., Appl. Phys. Lett. 64, 196 (1994).Google Scholar
7. Madhukar, A. et al. , Proc. NATO Advanced Workshop, Feb. 20-24, 1995, Ringberg Castle, Germany, (Singapore Scientific Publications, 1995, In Press).Google Scholar
8. Ghaisas, S. V. and Madhukar, A., SPIE Proc., Vol. 944, 16 (1988); J. Appl. Phys. 65, 1888 (1989).Google Scholar
9. Kobayashi, N. P. et al. (unpublished).Google Scholar
10. Xie, Q., Chen, P. and Madhukar, A., Appl. Phys. Lett. 65, 2051 (1994).Google Scholar
11. Mott, N. F. and Nabarro, F. R. N., Proc. Phys. Soc. (London) 52, 86 (1940); J. P. Hirth and J. Lothe, Theory of Dislocations, 2nd Ed. (John Wiley & Sons, NY 1982).Google Scholar
12. Srolovitz, D. J., Acta Metall. 37, 621 (1989).Google Scholar
13. Schwoebel, R. L., J. Appl. Phys. 40, 614 (1969).Google Scholar
14. Elastic constants for GaAs and InAs are quoted from, Materials Aspects of GaAs and InP based Structures, by Swaminathan, V. and Macrander, A. T., (Prentice Hall, Englewood, NJ 1991). Typical values for A=0.572 and strain energy, W=0.0557 eV.Google Scholar
15. Konkar, A. et al. , presented in MRS Spring Meeting (Symposium Proceeding D), April 17 -21, 1995, San Francisco, CA.Google Scholar