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In Situ Substrate Temperature Measurement During MBE by Band-Edge Reflection Spectroscopy

Published online by Cambridge University Press:  22 February 2011

J. A. Roth ,
T. J. De Lyon  and
M. E. Adel
J. A. Roth
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
T. J. De Lyon
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
M. E. Adel
Affiliation:
CI Systems, Ltd., Migdal Haemek, Israel
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Abstract

The use of band-edge reflection spectroscopy (BRS) to determine the substrate temperature during MBE is reviewed. Data are presented for Si, GaAs, InP and CdZnTe substrates, and the use of BRS during the growth of ZnTe on Si is demonstrated. We discuss complications that arise due to optical interference in the epitaxial layers, and methods to compensate for the effects of interference are described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 353
Copyright
Copyright © Materials Research Society 1994

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