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Published online by Cambridge University Press: 26 February 2011
A variety of electron-beam-induced effects, including oxidation, reduction and surface rearrangements are observed to occur at surfaces of oxides, fluorides and compound semiconductors during electron irradiation within the electron microscope. The extent and type of surface modifications observed are shown to depend upon the irradiation level, the residual microscope vacuum and the specimen temperature. For example, ex situ annealing of compound semiconductors leads to different end-products compared with in situ irradiation, thus showing that residual gas components can have a strong influence on the surface reactions. Electron irradiation of rutile during annealing at high temperature under ultrahigh vacuum conditions caused the rapid development of well-facetted holes without the usual intermediary phase seen at room temperature in conventional vacuum.