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In Situ Investigation of the Palladium Silicon Reaction

Published online by Cambridge University Press:  26 February 2011

D. A. Smith ,
P. A. Psaras ,
I. J. Fishert  and
K. N. Tu
D. A. Smith
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y. 10598
P. A. Psaras
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y. 10598
I. J. Fishert
Affiliation:
I.J. Fisher, Fairleigh Dickenson University, Rutherford, N.J. 07080
K. N. Tu
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y. 10598
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Abstract

Palladium has been deposited on {1001 and t1111 oriented silicon wafers and also on polysilicon. Cross-sectional specimens for transmission electron microscopy were prepared and heated in-situ. The interfaces between silicide and silicon were rough and the volume changes accompanying heating and compound formation caused elastic strains in the substrates and in one case hillock formation in the products.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 37: Symposium D – Layered Structures, Epitaxy, and Interfaces , 1984 , 407
Copyright
Copyright © Materials Research Society 1985

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References

1. Föll, H., Ho, P.S. and Tu, K.N., Phil. Mag. A 45, 31 (1982).Google Scholar
2. Cherns, D., Smith, D.A., Krakow, W. and Batson, P.E., Phil. Mag A 45, 107.CrossRefGoogle Scholar
3. Tung, R.T., Gibson, J.M. and Poate, J.M., Appl. Phys. Lett. 42, 888 (1983).10.1063/1.93776CrossRefGoogle Scholar
4. Tung, R.T., Appl. Phys. Lett. 41, 818 (1982).Google Scholar
5. Tu, K.N., Chu, W.K. and Mayer, J.W. Thin Solid Films 25, 403 (1975).Google Scholar
6. Bower, R.W., Sigurd, D. and Scott, R.E., Solid State Electronics 16, 1461 (1973).10.1016/0038-1101(73)90063-4Google Scholar
7. Fertig, D.J. and Robinson, G.Y., Solid State Electronics 19, 407 (1976).CrossRefGoogle Scholar
8. Wittmer, M. and Tu, K.N., Phys. Rev. B 27 1173 (1983).Google Scholar
9. Föll, H., Ho, P.S. and Tu, K.N., J. Appl. Phys., 52, 250 (1981).Google Scholar