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Impurity Free Vacancy Disordering Using Phosphorus Doped SiO2 and Pure SiO2 Caps

Published online by Cambridge University Press:  10 February 2011

P. Cusumano ,
A. Saher Helmy ,
B. S. Ooi ,
R. M. De La Rue ,
A. C. Bryce  and
J. H. Marsh
P. Cusumano
Affiliation:
Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, Scotland, U K, E-mail: [email protected]
A. Saher Helmy
Affiliation:
Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, Scotland, U K, E-mail: [email protected]
B. S. Ooi
Affiliation:
Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, Scotland, U K, E-mail: [email protected]
R. M. De La Rue
Affiliation:
Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, Scotland, U K, E-mail: [email protected]
A. C. Bryce
Affiliation:
Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, Scotland, U K, E-mail: [email protected]
J. H. Marsh
Affiliation:
Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, Scotland, U K, E-mail: [email protected]
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Abstract

A spatially selective quantum well intermixing process, using phosphorus-doped silica (SiO2:P) containing 5 wt% P to inhibit intermixing and pure SiO2 to enhance intermixing, is presented. The SiO2:P cap has been found to suppress bandgap shifts in both p-i-n and n-i-p GaAs/AlGaAs quantum well laser structures, with bandgap shift differences as large as 100 meV observed from samples capped with SiO2 and with SiO2:P after rapid thermal processing at temperatures as high as 950 °C for 60 s. Extended cavity ridge lasers exhibited low threshold currents with TE losses of 3.2 cm−1 measured in the passive waveguide sections at the lasing wavelength using the Fabry-Perot resonance method. This value is among the lowest reported so far using an impurity-free disordering technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 450: Symposium O – Infrared Applications of Semiconductors , 1996 , 419
Copyright
Copyright © Materials Research Society 1997

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References

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