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Impurities and Grain Size Modeling in Recrystallized Silicon

Published online by Cambridge University Press:  01 February 2011

Valeri V. Kalinin ,
Alexandre M. Myasnikov  and
Vladislav E. Zyryanov
Valeri V. Kalinin
Affiliation:
[email protected], Institute of Semiconductors Physics, Department of Single Crystals and Silicon Structures, 13 Lavrent'ev Avenue, Novosibirsk, AK, 630090, Russian Federation
Alexandre M. Myasnikov
Affiliation:
[email protected], Institute of Semiconductors Physics, Single Crystals and Silicon Structures, 13 Lavrent'ev Avenue, Novosibirsk, AZ, 630090, Russian Federation, +7(383)3333628, +7(383)3331967
Vladislav E. Zyryanov
Affiliation:
[email protected], Novosibirsk State Technical University, Department of Radiotechnic, Electronics and Physics, 20 Marx Avenue, Novosibirsk, 630049, Russian Federation
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Abstract

In our previous publications [1, 2 and 3], spreading resistance probe (SRP) measurements for quality control of metal induced lateral crystallization (MILC) of amorphous silicon (a-Si) were studied, and the mechanism of nickel diffusion was simulated using technology computer-aided design (TCAD) modeling.

Now, we continue to present the explanation of experimental results by modeling with the Synopsys TCAD package, whereby models for resistivity vs. grain size in implanted recrystallized silicon layers are implemented and compared with experiments.

Findings show that the SRP method can be used for the characterization of the MILC process of amorphous silicon and that a comparison of experimental and calculated data allows both a turn from qualitative to quantitative analysis of recrystallized silicon film and an estimate of grain size. It has been found that grain size depends on location in the MILC region and on the time and temperature of recrystallization.

Keywords

crystal growthamorphousSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1066: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2008 , 2008 , 1066-A17-05
Copyright
Copyright © Materials Research Society 2008

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References

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