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Improving PZT Thin Film Texture Through Pt Metallization and Seed Layers

Published online by Cambridge University Press:  01 March 2011

L.M. Sanchez ,
D.M. Potrepka ,
G.R. Fox ,
I. Takeuchi  and
R.G. Polcawich
L.M. Sanchez
Affiliation:
U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, Maryland 20783 Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, USA
D.M. Potrepka
Affiliation:
U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, Maryland 20783
G.R. Fox
Affiliation:
Fox Materials Consulting LLC, 7145 Baker Road, Colorado Spring, CO 80908
I. Takeuchi
Affiliation:
Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, USA
R.G. Polcawich
Affiliation:
U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, Maryland 20783
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Abstract

Leveraging past research activities in orientation control of lead zirconate titanate (PZT) thin films [1,2], this work attempts to optimize those research results using the fabrication equipment at the U.S. Army Research Laboratory so as to achieve a high degree of {001}- texture and improved piezoelectric properties. Initial experiments examined the influence of Ti/Pt and TiO2/Pt thins films used as the base-electrode for chemical solution deposition PZT thin film growth. In all cases, the starting silicon substrates used a 500 nm thermally grown silicon dioxide. The Pt films were sputter deposited onto highly textured titanium dioxide films grown by a thermal oxidation process of a sputtered Ti film [3]. The second objective targeted was to achieve highly {001}-textured PZT using a seed layer of PbTiO3 (PT). A comparative study was performed between Ti/Pt and TiO2/Pt bottom electrodes. The results indicate that the use of a highly oriented TiO2 led to highly {111}-textured Pt, which in turn improved both the PT and PZT orientations. Both PZT (52/48) and (45/55) thin films with and without PT seed layers were deposited and examined via x-ray diffraction methods (XRD) as a function of annealing temperature. As expected, the PT seed layer provides significant improvement in the PZT {001}-texture while suppressing the {111}-texture of the PZT. Improvements in the Lotgering factor (f) were observed upon comparison of the original Ti/Pt/PZT process (f=0.66) with samples using the PT seed layer as a template, Ti/Pt/PT/PZT (f=0.87), and with films deposited onto the improved Pt electrodes, TiO2/Pt/PT/PZT (f=0.96).

Keywords

x-ray diffraction (XRD)piezoelectricsol-gel
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1299: Symposium S – Microelectromechanical Systems—Materials and Devices IV , 2011 , mrsf10-1299-s04-09
Copyright
Copyright © Materials Research Society 2011

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References

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