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Improvement of Single-Junction a-Si:H Thin-Film Solar Cells Toward 10% Efficiency

Published online by Cambridge University Press:  23 June 2011

P. H. Cheng ,
S. W. Liang ,
Y. P. Lin ,
H. J. Hsu ,
C. H. Hsu  and
C. C. Tsai
P. H. Cheng
Affiliation:
National Chiao Tung University, Hsinchu, Taiwan
S. W. Liang
Affiliation:
National Chiao Tung University, Hsinchu, Taiwan
Y. P. Lin
Affiliation:
National Chiao Tung University, Hsinchu, Taiwan
H. J. Hsu
Affiliation:
National Chiao Tung University, Hsinchu, Taiwan
C. H. Hsu
Affiliation:
National Chiao Tung University, Hsinchu, Taiwan
C. C. Tsai
Affiliation:
National Chiao Tung University, Hsinchu, Taiwan
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Abstract

The hydrogenated amorphous silicon (a-Si:H) single-junction thin-film solar cells were fabricated on SnO2:F-coated glasses by plasma-enhanced chemical vapor deposition (PECVD) system. The boron-doped amorphous silicon carbide (a-SiC:H) was served as the window layer (p-layer) and the undoped a-SiC:H was used as a buffer layer (b-layer). The optimization of the p/b/i/n thin-films in a-Si:H solar cells have been carried out and discussed. Considering the effects of light absorption, electron-hole extraction and light-induced degradation, the thicknesses of p, b, n and i layers have been optimized. The optimal a-Si:H thin-film solar cell having an efficiency of 9.46% was achieved, with VOC=906 mV, JSC=14.42 mA/cm2 and FF=72.36%.

Keywords

amorphousplasma-enhanced CVD (PECVD) (deposition)Si
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1321: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology , 2011 , mrss11-1321-a05-03
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Rech, B. and Wagner, H., Appl. Phys. A: Mater. Sci. Process. 69, 155 (1999).Google Scholar
2. Staebler, D. and Wronski, C., Appl. Phys. Lett. 31, 292 (1977).10.1063/1.89674Google Scholar
3. Stutzmann, M., Jackson, W. B. and Tsai, C. C., Phys. Rev. B 32, 23 (1985).10.1103/PhysRevB.32.23Google Scholar
4. Tawada, Y., Tsuge, K., Kondo, M., Okamoto, H. and Hamakawa, Y., J. Appl. Phys. 53, 5273 (1982).10.1063/1.331363Google Scholar
5. Arch, J., Rubinelli, F., Hou, J. and Fonash, S., J. Appl. Phys. 69, 7057 (1991).10.1063/1.347645Google Scholar
6. Dutta, U. and Chatterjee, P., J. Appl. Phys. 96, 2261 (2004).Google Scholar
7. Arya, R., Catalano, A. and Oswald, R., Appl. Phys. Lett. 49, 1089 (1986).10.1063/1.97430Google Scholar
8. Guha, S., Yang, J., Pawlikiewicz, A., Glatfelter, T., Ross, R. and Ovshinsky, S., Appl. Phys. Lett. 54, 2330 (1989).10.1063/1.101118Google Scholar
9. Tsai, C. C., Hsu, C. H., Hsu, H. J., Cheng, P. H., Wang, C. M. and Huang, Y. T., paper presented at the Third Intermational Workshop on Thin-Film Silicon Solar Cells, Nagasaki, Japan, 11-14 October 2010.Google Scholar
10. Ganguly, G. and Matsuda, A., Phys. Rev. B 47, 3661 (1993).Google Scholar
11. Hsu, C. H., Cheng, P. H., Lin, Y. P., Hsu, H. J. and Tsai, C. C., Mat. Res. Soc. Proc. of 2011 Spring Meeting, Symposium A (to be published).Google Scholar