Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-24T23:15:40.645Z Has data issue: false hasContentIssue false

Improvement of Carbon Nanotube Films on SiC formed by Surface Decomposition by Hydrogen Peroxide Purification

Published online by Cambridge University Press:  31 January 2011

Takahiro Maruyama
Affiliation:
[email protected], Meijo University, Department of Materials Science and Engineering, 1-501 Shiogamaguchi, Nagoya, Aichi, 4688502, Japan, +81-52-838-2386, +81-52-832-1172
Fumiya Nakahama
Affiliation:
[email protected], Meijo University, Department of Materials Science and Engineering, 1-501 Shiogamaguchi, Nagoya, Aichi, 4688502, Japan, +81-52-838-2386, +81-52-832-1172
Shigeya Naritsuka
Affiliation:
[email protected], Meijo University, Department of Materials Science and Engineering, 1-501 Shiogamaguchi, Nagoya, Aichi, 4688502, Japan, +81-52-838-2386, +81-52-832-1172
Get access

Abstract

We studied the effects of annealing in H2O2 on the morphologies and structures of “as grown” high-density, well-aligned multi-walled carbon nanotube (MWNT) films formed by surface decomposition of SiC. After annealing in H2O2 solution at 100°C for 3 h, the G/D ratio increased from 1.44 to 2.33, the FWHM of the G band peak became narrower, and a D′ shoulder peak appeared. Transmission electron microscopy (TEM) revealed that the dispersion of MWNTs in dimethylformamide (DMF) solution was improved, suggesting that film impurities were reduced and that damage to the MWNTs was negligible. After annealing for 9 h, the G/D ratio decreased to 1.57, and exfoliation of some MWNTs was observed. In addition, several functional groups such as carboxylic (-COOH) and hydroxyl (-OH) were formed on the surface of the MWNTs. From these results, we conclude that annealing in H2O2 under proper conditions can effectively purify “as grown” MWNT films formed by surface decomposition of SiC.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kusunoki, M., Suzuki, T., Hirayama, T., Shibata, N., and Kaneko, K., Appl. Phys. Lett. 77, 531 (2000).Google Scholar
2. Kusunoki, M., Suzuki, T., Honjo, C., Hirayama, T., and Shibata, N., Chem. Phys. Lett. 366, 458 (2002).Google Scholar
3. Bang, H., Ito, Y., Kawamura, K., Hosoda, E., Yoshida, C., Maruyma, T., Naritsuka, S. and Kusinoki, M., Jpn. J. Appl. Phys. 45, 372 (2006).Google Scholar
4. Maruyama, T., Bang, H., Kawamura, Y., Fujita, N., Tanioku, K., Shiraiwa, T., Hozumi, Y., Naritsuka, S. and Kusunoki, M., Chem. Phys. Lett. 423, 317 (2006).Google Scholar
5. Ueda, K., Iijima, Y., Maruyama, T., Naritsuka, S., J. Nanosci. Nanotechnol. (in press).Google Scholar
6. Kusunoki, M., Honjo, C., Suzuki, T., and Hirayama, T., Appl. Phys. Lett. 87, 103105 (2005).Google Scholar
7. Kusunoki, M., Suzuki, T., Kaneko, K. and Ito, M., Philos. Mag. Lett. 79, 153 (1999).10.1080/095008399177381Google Scholar
8. Hernadi, K., Siska, A., Thien-Nga, L., Forro, L. and Kiricsi, I., Solid State Ionics, 141142, 203 (2001).Google Scholar
9. Peng, Y. and Liu, H., Ind. Eng. Chem. Res. 45, 6483 (2006).Google Scholar