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Improvement in Contact Resistivity to thin film Bi2Te3

Published online by Cambridge University Press:  01 February 2011

Rahul P Gupta ,
Ka Xiong ,
John B White ,
Kyeongjae Cho  and
Bruce Gnade
Rahul P Gupta
Affiliation:
[email protected]@gmail.com, University of Texas at Dallas, Richardson, Texas, United States
Ka Xiong
Affiliation:
[email protected], University of Texas at Dallas, Material Science and Engineering, Richardson, Texas, United States
John B White
Affiliation:
[email protected], Marlow Industries Incorporated, a subsidiary of II-VI Incorporated, Dallas, Texas, United States
Kyeongjae Cho
Affiliation:
[email protected], University of Texas at Dallas, Material Science and Engineering, Richardson, Texas, United States
Bruce Gnade
Affiliation:
[email protected], University of Texas at Dallas, Material Science and Engineering, Richardson, Texas, United States
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Abstract

A study of the impact of surface preparation and post-deposition annealing on contact resistivity for sputtered Ni and Co contacts to thin film Bi2Te3 is presented. The contact resistance values obtained using the transfer length method (TLM) for Ni is compared to Co as a potential contact metal to Bi2Te3. Post-deposition annealing at 100°C on samples that were sputter cleaned reduces the contact resistivity to < 10-7 Ω-cm2 for both Ni and Co contacts to Bi2Te3. Co provided similar contact resistance values as Ni, but had better adhesion and less diffusion into the thermoelectric (TE) material, making it a suitable candidate for contact metallization to Bi2Te3 based devices.

Keywords

thermoelectricityCoNi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1267: Symposium DD – Thermoelectric Materials 2010-Growth, Properties, Novel Characterization Methods and Applications , 2010 , 1267-DD05-20
Copyright
Copyright © Materials Research Society 2010

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