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Improved Switching Response of VO2 Devices Deposited on Silicon Nitride Membranes

Published online by Cambridge University Press:  01 February 2013

Yan Wang  and
John F. Muth
Yan Wang
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA Department of Physics, North Carolina State University, Raleigh, North Carolina 27695, USA
John F. Muth
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA
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Abstract

VO2films were deposited on sapphire, ITO glass and 200 nm thick silicon nitride membranes by Pulsed Laser Deposition (PLD). The electrical and optical properties have been investigated. Joule heating devices fabricated on silicon nitride membranes switches from semiconductor phase to metal phase by applying a constant voltage across two metal contacts. Compared to the devices fabricated on the normal substrates, such as sapphire, silicon or glasses, the switching speed of the devices on membrane is an order of magnitude faster. Decreasing the area and thickness of VO2 on top of thinner membranes allows kHz bandwidth to be achieved.

Keywords

metal-insulator transitionthin filmoptical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1494: Symposium Z – Oxide Semiconductors and Thin Films , 2013 , pp. 321 - 326
Copyright
Copyright © Materials Research Society 2013 

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