Hostname: page-component-745bb68f8f-d8cs5 Total loading time: 0 Render date: 2025-01-12T10:00:10.300Z Has data issue: false hasContentIssue false
  • English
  • Français

Improved Stability of RF Glow Discharge Deposited a-Si:H Achieved by Hydrogen Dilution of Silane.

Published online by Cambridge University Press:  26 February 2011

R. C. van Dort ,
H. J. Geerts  and
J. C. van den Heuvel
R. C. van Dort
Affiliation:
Delft University of Technology, Faculty of Electrical Engineering, Mekelweg 4, NL-2628 CD Delft, the Netherlands.
H. J. Geerts
Affiliation:
Delft University of Technology, Faculty of Electrical Engineering, Mekelweg 4, NL-2628 CD Delft, the Netherlands.
J. C. van den Heuvel
Affiliation:
Delft University of Technology, Faculty of Electrical Engineering, Mekelweg 4, NL-2628 CD Delft, the Netherlands.
Get access

Abstract

The magnitude of metastable light-Induced degradation of intrinsic hydrogenated amorphous silicon films deposited by rf glow discharge from different selene-hydrogen mixtures wan studied. By stone of spacecharge-limited current measurements the Fermi-lava1 density of states was determined for as-grown and light-soaked n+-t-n+ devices. Films deposited using a mixture of 55 vol.% silane and 45 vol.% hydrogen and a relatively high rf power level of 62 mW/cm2 to obtain a high growth rate exhibited an improved stability with regard to light-Induced degradation of the film, compared with films grown under the conditions of using pure etlane and an rf power Just sufficient to seintaln the plasma, conditions known to ylald good quality films. The results are explained in terms of an improvement in the structural oraer of the film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 173
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Steebler, O.L., Wronski, C.R., J. Appl. Phys.,51(8), 1980, 3262.Google Scholar
2. Knights, J.C., Lujan, R.A., Rosenblum, M.P., Street, R.A., Biegelsen, D.K., Reimer, J.A., Appl. Phys. Lett., 38(5), 1981, 331.CrossRefGoogle Scholar
3. van Dort, R.C., Geerts, M.J., van den Heuvel, J.C., Payson, J.S., J. Non-Cryst. Sol., 97/98, 1987, 1427.CrossRefGoogle Scholar
4. den Boer, W., PhD Thesis, University of Technology, Delft, 1983.Google Scholar
5. Stutzmann, M., Jackson, W.B., Tsai, C.C., Phys. Rev. B, 32(1), 1985, 23.Google Scholar
6. Crandall, R.S., Phys. Rev. B, 24, 1981, 7457.CrossRefGoogle Scholar
7. Adler, O., de Phys, J.., Colloq. 42, 1981, C4–3.Google Scholar
8. Dalal, V.L., Proc. 19th IEEE, Photovolt. Spec. Conf., New Orleans, 1987, 315.Google Scholar
9. Carlson, D.E., Proc. Int. Workshop Amorphous Semicond. Benjing, 1987, 193.Google Scholar
10. Tsai, C.C., Knights, J.C., Chang, G., Wacker, B., J. Appl. Phys. 59(8), 1986, 2998.CrossRefGoogle Scholar
11. van Dort, R.C., Geerts, M.J., van den Heuvel, J.C., Metselaar, J.W., Elec. Lett. 23(8), 1987, IOS. Google Scholar
12. Winterling, G., Proc. E-MRS Conf., Photon, Beam and Plasma-enhanced Processing, 1989, SS. Google Scholar
13. Nishikawa, S., Kakinuma, H., Watanabe, T., Niki, K., Jpn. J. Appl Phys., 2, 1985, 639.CrossRefGoogle Scholar