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Impact of TiN/HfO2 Integration on Carrier Mobility

Published online by Cambridge University Press:  01 February 2011

Mikael Casse ,
Laurent Thevenod ,
Bernard Guillaumot ,
Lucie Tosti ,
Vincent Cosnier ,
Jerome Mitard ,
Gilles Reimbold ,
Thierry Billon ,
Mireille Mouis  and
Fabien Boulanger
Mikael Casse
Affiliation:
[email protected], CEA-DRT-LETI, D2NT, 17 rue des Martyrs, GRENOBLE Cedex 9, 38054, France
Laurent Thevenod
Affiliation:
[email protected], CEA-DRT-LETI, D2NT, 17 rue des Martyrs, GRENOBLE Cedex 9, 38054, France
Bernard Guillaumot
Affiliation:
[email protected], STMicroelectronics, 850 rue Jean Monnet, Crolles, N/A, 38920, France
Lucie Tosti
Affiliation:
[email protected], CEA-DRT-LETI, D2NT, 17 rue des Martyrs, GRENOBLE Cedex 9, 38054, France
Vincent Cosnier
Affiliation:
[email protected], CEA-DRT-LETI, D2NT, 17 rue des Martyrs, GRENOBLE Cedex 9, 38054, France
Jerome Mitard
Affiliation:
[email protected], STMicroelectronics, 850 rue Jean Monnet, Crolles, N/A, 38920, France
Gilles Reimbold
Affiliation:
[email protected], CEA-DRT-LETI, D2NT, 17 rue des Martyrs, GRENOBLE Cedex 9, 38054, France
Thierry Billon
Affiliation:
[email protected], CEA-DRT-LETI, D2NT, 17 rue des Martyrs, GRENOBLE Cedex 9, 38054, France
Mireille Mouis
Affiliation:
[email protected], IMEP, 23 rue des Martyrs, Grenoble cedex 9, N/A, 38016, France
Fabien Boulanger
Affiliation:
[email protected], CEA-DRT-LETI, D2NT, 17 rue des Martyrs, GRENOBLE Cedex 9, 38054, France
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Abstract

We have investigated the impact of a metal gate (TiN) and high-k dielectric (HfO2) on the carrier mobility. We have shown that strong remote Coulomb scattering (RCS) due to charges in the HfO2 layer (either grown by ALD or MOCVD) mostly degrades the mobility at low/medium field. High amount of charges (>1013cm-2) is needed to explain the 30% degradation observed in devices with a thin interface layer. These additional coulombic interactions are effective for bottom oxide up to 2nm. We have developed a RCS model to fully explain the experimental data. The influence of the metal gate is also evidenced. The latter has a significative impact on the Si/SiO2 interface roughness, and may induce some additional coulombic interactions.

Keywords

microelectronicsdielectricelectronic material
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 917: Symposium E – Gate Stack Scaling – Materials Selection, Role of Interfaces, and Reliability Implications , 2006 , 0917-E04-04
Copyright
Copyright © Materials Research Society 2006

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References

1 Reimbold, G. et al., in Proc. of ECS symp., vol. 2005–01, pp. 437–455 (2005).Google Scholar
2 Chau, R. et al., IEEE Elec. Dev. Lett. 25, 408 (2004).Google Scholar
3 Fischetti, M. et al., J. Appl. Phys. 90, pp. 4587–4608 (2001).Google Scholar
4 Saito, S. et al., IEDM Tech. Dig., pp. 33.3.1–4. (2003).Google Scholar
5 Weber, O. et al., IEDM Tech. Dig., pp. 867–870 (2004).Google Scholar
6 Leroux, C. et al., IEDM Tech. Dig., pp. 737–740 (2004)Google Scholar
7 Thevenod, L. et al., in Proc. INFOS, Micro. Eng. 80, 11 (2005).Google Scholar
8 Cassé, M. et al., IEEE Trans. Elec. Dev 53, 759 (2006).Google Scholar
9 Villa, S. et al., IEEE Trans. Elec. Dev. 45, pp. 110–115 (1998).Google Scholar
10 Esseni, D. et al., IEEE Trans. Elec. Dev. 50, pp. 1665–1674 (2003).Google Scholar
11 Weber, O. et al., in Proc. ESSDERC, pp. 379–382 (2005).Google Scholar