Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-02T23:13:12.289Z Has data issue: false hasContentIssue false
  • English
  • Français

Impact of Rapid Thermal Annealing of Ti/Tin Bilayers On Subsequent Chemical Vapor Deposition Of Tungsten

Published online by Cambridge University Press:  15 February 2011

A. Mourouxt ,
R. Palmans ,
J. Keinonen ,
S. -L. Zhang ,
K. Maex  and
S. Petersson
A. Mourouxt
Affiliation:
Royal Institute of Technology, Department of Electronics, S-164 40 Kista, Sweden
R. Palmans
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
J. Keinonen
Affiliation:
University of Helsinki, Accelerator Laboratory, SF-00550 Helsinki, Finland
S. -L. Zhang
Affiliation:
Royal Institute of Technology, Department of Electronics, S-164 40 Kista, Sweden
K. Maex
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
S. Petersson
Affiliation:
Royal Institute of Technology, Department of Electronics, S-164 40 Kista, Sweden
Get access

Abstract

The influence of rapid thermal annealing (RTA) of Ti/TiN on the stress in the subsequently deposited tungsten (W) films and on the impurity contents at the TiN-W interface was investigated for two types of Ti/TiN bilayers sputter-deposited at 300 °C and 550 °C. A post treatment of the Ti/TiN bilayers resulted in a substantially decreased stress in the W films. It also led to a considerable reduction of the fluorine contents at the TiN-W interface. Both effects were more pronounced for the W deposited on the low-temperature Ti/TiN bilayers and/or annealed in the NH3 atmosphere, than on the high-temperature Ti/TiN bilayers and/or annealed in the N2 atmosphere. Annealed in N2, the interfacial oxygen at the TiN-W interface increased slightly, which can be attributed to the presence of trace amounts of O2 in the N2 atmosphere. A slight increase in the W film resistivity was thus found for the W films deposited on the N2 annealed Ti/TiN bilayers, while the resistivity decreased somewhat for the W films deposited on the NH3 annealed Ti/TiN bilayers. After the post treatment, a large amount of nitrogen was found incorporated in the Ti layer forming TiNx (× < 0.3). However, the post treatment led to a considerable increase in the tensile stress in the Ti/TiN bilayers, and then an increase in the total stress of the whole Ti/TiN/W system. This stress increase could be controlled by using moderate anneal temperatures (e.g. < 550 °C) for the post treatment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 365
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Zhang, S.-L., Palmans, R., Petersson, C.S. and Maex, K., J. Appl. Phys 78, 7313 (1995).Google Scholar
2. Zhang, S.-L., Palmans, R., Keinonen, J., Petersson, C.S. and Maex, K., Appl. Phys. Lett. 67, 2998 (1995).Google Scholar
3. Schmitz, J., Kang, S., Wolters, R. and van den Aker, K., J. Electrochem. Soc. 141, 843 (1994).Google Scholar
4. Rana, V.V.S., Taylor, J.A. and Holschwandner, L.H. and Tsai, N.S., in Tungsten and Other Refractory Metals for VLSI Applications II, edited by Broadbent, E.K. (Materials Research Society, Pittsburgh, 1987), pp. 187–195.Google Scholar
5. Palmans, R., Mouroux, A., Zhang, S.-L., Petersson, S. and Maex, K., presented in Advanced Metallization and Interconnect Systems for ULSI Applications, Portland, Oregon, October 3–5, 1995.Google Scholar
6. Sun, S.C. and Tsai, M.H., Appl. Phys. Lett. 68, 670 (1996).Google Scholar
7. “Binary Alloy Phase Diagrams”, edited by Massalski, T.B. (American Society for Metals, Metals Park, Ohio, 1986), vol.2, p. 1655–1656.Google Scholar
8. Standard JCPDS diffraction pattern 40–1276 (hexagonal alpha-TiN0.3), JCPDS - International Center for Diffraction Data, PDF-2 Database, 12 Campus Boulevard, Newtown Square, PA 19073–3273, USA.Google Scholar
9. Koerner, H., Erb, H.P. and Melzner, H., Appl. Surf. Sci. 73, 6 (1993).Google Scholar