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Impact of Interfacial Nitridation of HfO2 High-k Gate Dielectric Stack on 4H-SiC

Published online by Cambridge University Press:  01 February 2011

Rajat Mahapatra ,
Amit K. Chakraborty ,
Peter Tappin ,
Bing Miao ,
Alton B. Horsfall ,
Sanatan Chattopadhyay ,
Nick G. Wright  and
Karl S. Coleman
Rajat Mahapatra
Affiliation:
[email protected], Newcastle University, School of Electrical, Electronics and Computer Engineering, Merz Court, Newcastle, Newcastle, NE2 4NB, United Kingdom
Amit K. Chakraborty
Affiliation:
[email protected], University of Durham, Department of Chemistry, South Road, Durham, DH1 3LE, United Kingdom
Peter Tappin
Affiliation:
[email protected], Newcastle University, School of Electrical, Electronics and Computer Engineering, Newcastle, NE1 7RU, United Kingdom
Bing Miao
Affiliation:
[email protected], Newcastle University, School of Electrical, Electronics and Computer Engineering, Newcastle, NE1 7RU, United Kingdom
Alton B. Horsfall
Affiliation:
[email protected], Newcastle University, School of Electrical, Electronics and Computer Engineering, Newcastle, NE1 7RU, United Kingdom
Sanatan Chattopadhyay
Affiliation:
[email protected], Newcastle University, School of Electrical, Electronics and Computer Engineering, Newcastle, NE1 7RU, United Kingdom
Nick G. Wright
Affiliation:
[email protected], Newcastle University, School of Electrical, Electronics and Computer Engineering, Newcastle, NE1 7RU, United Kingdom
Karl S. Coleman
Affiliation:
[email protected], University of Durham, Department of Chemistry, South Road, Durham, DH1 3LE, United Kingdom
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Abstract

HfO2 films were grown on SiO2/4H-SiC and SiON/4H-SiC layers by evaporation of metallic Hf in an electron beam deposition system followed by thermal oxidation. X-ray photoelectron spectroscopy confirmed the formation of HfO2 films. There is no evidence of formation of hafnium silicide or carbon pile up at the surface as well as at the interfacial layer. Electrical measurements show the presence of fewer slow traps in the HfO2/SiON gate dielectric stack on 4H-SiC and comparable values of interface state density. The HfO2/SiON stack layer improves leakage current characteristics with a higher breakdown field and has better reliability under electrical stress.

Keywords

dielectricmicroelectronicsx-ray photoelectron spectroscopy (XPS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 996: Symposium H – Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies , 2007 , 0996-H07-08
Copyright
Copyright © Materials Research Society 2007

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