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The Impact of Capping on the Mobility and Thermal Stability of Organic Thin Film Transistors

Published online by Cambridge University Press:  26 February 2011

Stephan Meyer
Affiliation:
[email protected], University of Stuttgart, 3. Physics Institute, Pfaffenwaldring 57, Stuttgart, 70550, Germany
Stefan Sellner
Affiliation:
[email protected], Harvard University, Division of Engineering and Applied Sciences, Cambridge, MA, 02138, United States
Frank Schreiber
Affiliation:
[email protected], University of Tübingen, Institute of Applied Physics, Tübingen, 72076, Germany
Helmut Dosch
Affiliation:
[email protected], Max-Planck-Institute, Stuttgart, 70569, Germany
Gerhard Ulbricht
Affiliation:
[email protected], Max-Planck-Institute, Stuttgart, 70569, Germany
Matthias Fischer
Affiliation:
[email protected], University of Stuttgart, 1st Physics Institute, Stuttgart, 70550, Germany
Bruno Gompf
Affiliation:
[email protected], University of Stuttgart, 1st Physics Institute, Stuttgart, 70550, Germany
Jens Pflaum
Affiliation:
[email protected], University of Stuttgart, 3rd Physics Institute, Stuttgart, 70550, Germany
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Abstract

We performed temperature-dependent studies on pentacene thin film transistors (TFTs) with and without encapsulation. The capping layer is realized either by a sputtering layer of aluminum oxide (AlOx.) or, alternatively, by a polymeric layer of poly-para-xylylene (PPX). A field-effect can be demonstrated for both capping materials up to temperatures of about 140 – 170 °C, which is about 50 °C above the desorption point of uncapped pentacene thin films on SiO2 substrates. Complementary studies by thermal desorption spectroscopy and temperature dependent x-ray diffraction show that the organic layer remains crystalline on the substrate far above the electrical breakdown temperature of the encapsulated device.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

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