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Icp Etching Of SiC

Published online by Cambridge University Press:  10 February 2011

J. J. Wang ,
E. S. Lambers ,
S. J. Pearton ,
M. Ostling ,
C.-M. Zetterling ,
J. M. Grow  and
F. Ren
J. J. Wang
Affiliation:
Dept. Materials Science and Engineering, University of Florida, Gainesville FL 32611
E. S. Lambers
Affiliation:
Dept. Materials Science and Engineering, University of Florida, Gainesville FL 32611
S. J. Pearton
Affiliation:
Dept. Materials Science and Engineering, University of Florida, Gainesville FL 32611
M. Ostling
Affiliation:
Royal Institute of Technology, Kista, Sweden
C.-M. Zetterling
Affiliation:
Royal Institute of Technology, Kista, Sweden
J. M. Grow
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
F. Ren
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
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Abstract

A number of different plasma chemistries, including NF3/O2, SF6/O2 , SF6/Ar, ICI, IBr, Cl2/Ar, BCl3/Ar and CH4/H2/Ar, have been investigated for dry etching of 6H and 3C-SiC in a Inductively Coupled Plasma tool. Rates above 2,000 Å·cm−1 are found with fluorine-based chemistries at high ion currents. Surprisingly, Cl2-based etching does not provide high rates, even though the potential etch products (SiCl4 and CCl4 ) are volatile. Photoresist masks have poor selectivity over SiC in F2 - based plasmas under normal conditions, and ITO or Ni are preferred.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 177
Copyright
Copyright © Materials Research Society 1998

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