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Hydrogen-Induced Metastability of Polycrystalline Silicon

Published online by Cambridge University Press:  26 February 2011

N. H. Nickel
N. H. Nickel*
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304
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Abstract

The presence of H in polycrystalline silicon gives rise to new and hitherto unexpected phenomena. In this paper two of the most recent observations are reviewed: (i) Hydrogen-induced metastable changes of the dark conductivity due to the formation and dissociation of an electrically active H complex and (ii) the generation of acceptor states during prolonged exposure of poly-Si to monatomic H at elevated temperatures. The observed type conversion is clearly due to the diffusion of excess H from the plasma since it does not occur during exposure to other species such as oxygen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 381
Copyright
Copyright © Materials Research Society 1995

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