Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-02T23:00:29.640Z Has data issue: false hasContentIssue false
  • English
  • Français

Hydrogenated Amorphous Silicon / ZnO Shottky Heterojunction for Position Sensitive Detectors

Published online by Cambridge University Press:  17 March 2011

H. ǵuas ,
P. Nunes ,
E. Fortunato ,
R. Silva ,
V. Silva ,
J. Figueiredo ,
F. Soares  and
R. Martins
H. ǵuas
Affiliation:
Departamento de Ci̸ncia dos Materiais, Faculdade de Ci̸ncias e Tecnologia, Universidade Nova de Lisboa, 2825-114 Caparica –, PORTUGAL
P. Nunes
Affiliation:
Departamento de Ci̸ncia dos Materiais, Faculdade de Ci̸ncias e Tecnologia, Universidade Nova de Lisboa, 2825-114 Caparica –, PORTUGAL
E. Fortunato
Affiliation:
Departamento de Ci̸ncia dos Materiais, Faculdade de Ci̸ncias e Tecnologia, Universidade Nova de Lisboa, 2825-114 Caparica –, PORTUGAL
R. Silva
Affiliation:
Departamento de Ci̸ncia dos Materiais, Faculdade de Ci̸ncias e Tecnologia, Universidade Nova de Lisboa, 2825-114 Caparica –, PORTUGAL
V. Silva
Affiliation:
Departamento de Ci̸ncia dos Materiais, Faculdade de Ci̸ncias e Tecnologia, Universidade Nova de Lisboa, 2825-114 Caparica –, PORTUGAL
J. Figueiredo
Affiliation:
Departamento de Ci̸ncia dos Materiais, Faculdade de Ci̸ncias e Tecnologia, Universidade Nova de Lisboa, 2825-114 Caparica –, PORTUGAL
F. Soares
Affiliation:
Departamento de Ci̸ncia dos Materiais, Faculdade de Ci̸ncias e Tecnologia, Universidade Nova de Lisboa, 2825-114 Caparica –, PORTUGAL
R. Martins
Affiliation:
Departamento de Ci̸ncia dos Materiais, Faculdade de Ci̸ncias e Tecnologia, Universidade Nova de Lisboa, 2825-114 Caparica –, PORTUGAL
Get access

Abstract

In this work a new structure is proposed for position sensitive detectors consisting of glass/Cr/a-Si:H(n+)/a-Si:H(i)/ZnO, where the ZnO forms an heterojunction with the a-Si:H(i). The results show that this structure works with success in the fabrication of linear position sensitive detectors. The devices present a good nonlinearity of ͌ 2% and a good sensitivity tothe light intensity. The main advantages of this structure over the classical p-i-n are an easier to built topology and a higher yield due to a better immunity to the a-Si:H pinholes, since the ZnO does not diffuse so easily into a-Si:H as the metal does, which are the cause of frequent failure in the p-i-n devices due to short-circuits caused by the deposition of the metal over the a-Si:H. In this structure the illumination is made directly on the ZnO, so a transparent substrate is not needed and a larger range of substrates can be used.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A26.6
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Martins, R. and Fortunato, E.: Thin film position sensitive detectors: from 1D to 3D applications in The Technology and Applications of Amorphous Silicon, ed. by Street, R., Springer Verlage, p. 342 (1999).Google Scholar
[2] Fortunato, E., Soares, F., Lavareda, G., and Martins, R.: Mat. Res. Soc. Symp. Proc. 377, 797 ((1995).Google Scholar
[3] Fortunato, E., Teodoro, P., Silva, V., Ferreira, I., Nunes, Y., Guimarães, N., Soares, F., Giuliani, F., Popovic, G., Brener, W. and R. Martins. Phil. Mag. B, 80(4),765 (2000).Google Scholar
[4] Arimoto, S., Yamamoto, H., Ohno, H., Hasegawa, H.: J. Appl. Phys. 57(10), 4778 (1985).Google Scholar
[5] Fortunato, E., Ferreira, I., Giuliani, F., Wurmsdobler, P., R. Martins. J. of Non-Cryst. Solids, 266–269, 1213 (2000).Google Scholar
[6] Yamamoto, Y., Futako, W., Fukutani, K., Sugawara, M., Kamiya, T., Fortmann, C. M., I. Shimizu, Mat. Res. Soc. Symp. Proc. 507, 199 (1998).Google Scholar
[7] Aguas, H., Martins, R., Nunes, Y., Maneira, M., E. Fortunato: Influence of the Plasma Regime on the Structural, Optical, Electrical and Morphological Properties of a-Si:H Thin Films, Dusty and Colloidal plasmas in Solid State Phenom. (2001) in print.Google Scholar
[8] Nunes, P., Costa, D., Fortunato, E., R. Martins: Vacuum (2001), in print.Google Scholar
[3] Fortunato, E. and R. Martins. Rev. Scientific Instruments, 67(8), 2702 (1996).Google Scholar
[10] Fortunato, E., Lavareda, G., Martins, R., F. Soares and L. Fernandes. Sensors & Actuators A 51, 135 (1996).Google Scholar
[11] Forouhi, A.R. and Bloomer, I., Phys. Rev.B, 34, 7018 (1986).Google Scholar
[12] Jellison, G.E. and Modine, F.A., Appl. Physic. Letters, 69(3), 371 (1996).Google Scholar
[13] Fortunato, E., Nunes, P., Marques, A., Costa, D., ǵuas, H., Ferreira, I., Costa, M., R Martins:Highly conductive/transparent ZnO:Al thin film deposited at room temperature by r.f. magnetron sputtering, to be published in Materials Forum (2000).Google Scholar
[13] Layadi, Nacer, Croissance de couches minces de silicium amorphe et microcristalline préparées par méthodes plasma et traitement laser, Ph.D. these (1995), Ecole Polytechnique de Paris.Google Scholar
[15] Edwards, I., Sensors (December 1988).Google Scholar