Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-07T23:09:43.520Z Has data issue: false hasContentIssue false
  • English
  • Français

Hydrogen Treatment of Undoped Zno Thin Film Using Photo-Chemical Vapor Deposition

Published online by Cambridge University Press:  10 February 2011

Seung Jae Baik ,
Jinsoo Song  and
Koeng Su Lim
Seung Jae Baik
Affiliation:
Department of Electrical Engineering, KAIST, Taejon, Korea, [email protected]
Jinsoo Song
Affiliation:
Department of Photovoltaic Research Team, KIER, Taejon, Korea
Koeng Su Lim
Affiliation:
Department of Electrical Engineering, KAIST, Taejon, Korea, [email protected]
Get access

Abstract

To obtain high quality ZnO thin films for use as transparent electrodes of amorphous silicon solar cells, hydrogen treatment of the films using photo-chemical vapor deposition was performed for the first time. The as-deposited ZnO thin film was irradiated by UV light during the flow of hydrogen molecules in the presence of photo-sensitizers of mercury. As the treatment time increased, resistivity decreased from 1 × 10−2Ωcm to 2 × 10−3Ωcm. Moreover, haze ratio increased from 20% to 48%. Hydrogen radicals were thought to be playing various roles on the neighborhood of the surface region and the grain boundary region. This new trial gave us new understanding into the relation between hydrogen and ZnO. Moreover, these results could be applied to the process of amorphous silicon solar cells and a possible increase of efficiency is expected.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 426: Symposium J – Thin Films for Photovoltaic and Related Device , 1996 , 443
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Ellis, F. B. et al., Experimental and Theoretical Results for Light Trapping in High Efficiency a- Si1-xCx:H/a-Si:H Solar Cells Prepared on Granular Tin Oxide, (Mat. Res. Soc. Symp. Proc. 70, 1986) pp. 557–562 Google Scholar
2. Tao, G. et al., Highly Reflective TCO/AI Back Contact for a-Si:H Solar Cells, (11 th European Photovoltaic Solar Energy Conference and Exhibition, Montreux, Switzerland, 1992)Google Scholar
3. Major, S. et al., Thin Solid Films 122, 31 (1984)Google Scholar
4. Melnick, D. A., J. Chem. Phys. 26, 1136 (1957)Google Scholar
5. Takahashi, Y., Kanamori, M., Kondoh, A., Minoura, H. and Ohya, Y., Jpn. J. Appl. Phys. 33, 6611 (1994)Google Scholar
6. An, Ilsin, Lu, Yiwei., Wronski, C. R., Collins, R. W., Appl. Phys. Lett. 64 (24), 3317 (1994)Google Scholar
7. Kohiki, S., Nishitani, M., Wada, T., and Hirao, T., Appl. Phys. Lett. 64 (21), 2876 (1994)Google Scholar
8. Lee, J. W. and Lim, K. S., Semiconductor Science and Technology 11, Number 4, 597, (1996)Google Scholar
9. Eden, J. G., Photochemical Vapor Deposition, (John Wiley & Sons. Inc., 1992), pp. 97–124.Google Scholar