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Hydrogen Passivation of Si and Be Dopants in InAlAs

Published online by Cambridge University Press:  26 February 2011

G. Roos ,
N. M. Johnson ,
Y. C. Pao ,
J. S. Harris Jr  and
C.y Herring
G. Roos
Affiliation:
Department of Electrical Engineering, Solid State Electronics Laboratory, Stanford University, Stanford, CA 94305 Xerox Palo Alto Research Center, Palo Alto, CA 94304
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
Y. C. Pao
Affiliation:
Department of Electrical Engineering, Solid State Electronics Laboratory, Stanford University, Stanford, CA 94305
J. S. Harris Jr
Affiliation:
Department of Electrical Engineering, Solid State Electronics Laboratory, Stanford University, Stanford, CA 94305
C.y Herring
Affiliation:
Department of Applied Physics, Stanford University, Stanford, CA 94305
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Abstract

Hydrogen passivation and thermal reactivation of Si donors and Be acceptors were investigated in In0.52Al0.48As grown by molecular beam epitaxy. The semiconducting alloy was passivated by exposure to monatomic hydrogen or deuterium from a remote microwave plasma. The passivation was achieved by exposing the samples to monatomic hydrogen at temperatures between 200 and 250 °C for 1h. The electrical activity of the dopants was monitored by spreading resistance and C-V measurements. The samples were homogeneously doped to concentrations of 1.5×1016 or 6×1017 Si / cm3 and 6×1017 Be / cm3. Both dopants were passivated by more than two orders of magnitude through the epitaxial layers. An additional annealing step (440°C, 5 min) resulted in a complete reactivation of the passivated dopants. In addition to the electrical measurements, secondary ion mass spectroscopy showed that for both the Be- and the Si-doped layers the hydrogen profiles were essentially identical to the dopant profiles throughout the epilayers. This behaviour suggests that hydrogen migration is a dopant-trapping-limited process in n-and p-type In0.52Al0.48As.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 667
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Hydrogen in Semiconductors, vol. eds. Pankove, J. I. and Johnson, N. M., Semiconductors and Semimetals Vol, 34 (Academic, San Diego, 1991).Google Scholar
2. Pearton, S. J., Corbett, J. W. and Shi, T. S., Appl. Phys. A 43, 153 (1987).CrossRefGoogle Scholar
3. Pavesi, L., Martinelli, F., Martin, D. and Reinhardt, F. K., Appl. Phys. Lett. 54, 1522 (1989).CrossRefGoogle Scholar
4. Haller, E. E., Semicond. Sci. Technol. 6, 73 (1991).CrossRefGoogle Scholar
5. Johnson, N. M., Burnham, R. D., Street, R. D. and Thornton, R. L., Phys. Rev. B 33, 1102 (1986).CrossRefGoogle Scholar
6. Nabity, J. C., Stavola, M., Lopata, J., Dautremont-Smith, W. C., Tu, C. W. and Pearton, S. J., Appl. Phys. Lett. 50, 921 (1987).CrossRefGoogle Scholar
7. Mostefaoui, R., Chevallier, J., Jalil, A., Pesant, J. C., Tu, C. W. and Kopf, R. F., J. Appl. Phys 64, 921 (1988).CrossRefGoogle Scholar
8. Roos, G., Johnson, N. M., Herring, C. and Harris, J. S. Jr, Proc. 16th Intern. Conf. Def. Semic, in press.Google Scholar
9. Tatarkiewicz, J., Clerjaud, B., Cote, D., Gendron, F. and Hennel, A. M., Appl. Phys. Lett. 53, 382 (1988).CrossRefGoogle Scholar
10. Dautremont-Smith, W. C., Lopata, J., Pearton, S. J., Koszi, L. A., Stavola, M. and Swaminathan, V., J. Appl. Phys. 66, 1993 (1989).CrossRefGoogle Scholar
11. Pajot, B., Chevallier, J., Jalil, A. and Rose, B., Semicond. Sci. Technol. 4, 91 (1989).CrossRefGoogle Scholar
12. Jackson, G. S., Hall, D. C., Guido, L. J., Plano, W. E., Pan, N., Holonyak, N. and Stillman, G. E., Appl. Phys. Lett. 52, 691 (1988).CrossRefGoogle Scholar
13. Constant, E., Electron. Lett. 23 841 (1987).CrossRefGoogle Scholar
14. Pao, Y.-C. and Harris, J. S. Jr, J. Crystal Growth 111, 333 (1990),Google Scholar
15. Johnson, N. M., in ref. 1, Chap. 7.Google Scholar
16. Herring, C. and Johnson, N. M., in ref. 1, Chap. 10.Google Scholar