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Hydrogen Passivation of Shallow Dopants in Indium Doped Bulk CdTe

Published online by Cambridge University Press:  26 February 2011

Suma Gurumurthy ,
A. K. Sreedhar ,
H. L. Bhat ,
B. Sundersheshu ,
R. K. Bagai  and
Vikram Kumar
Suma Gurumurthy
Affiliation:
Department of Physics Indian Institute of Science, Bangalore-560 012, India
A. K. Sreedhar
Affiliation:
Department of Physics Indian Institute of Science, Bangalore-560 012, India
H. L. Bhat
Affiliation:
Department of Physics Indian Institute of Science, Bangalore-560 012, India
B. Sundersheshu
Affiliation:
Solid State Physics Laboratory, Lucknow road, Delhi-110 054, India
R. K. Bagai
Affiliation:
Solid State Physics Laboratory, Lucknow road, Delhi-110 054, India
Vikram Kumar
Affiliation:
Solid State Physics Laboratory, Lucknow road, Delhi-110 054, India
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Abstract

Hydrogen passivation effects in In doped n-CdTe upon exposure to rf hydrogen plasma have been studied by electrical and photoluminescence measurements. Shallow dopant passivation of approximately an order of magnitude at 150°C and 50% at 170°C is observed. No visual damage is seen. Reverse bias annealing effects are also studied. Results are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 423
Copyright
Copyright © Materials Research Society 1995

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References

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