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Hydrogen Microstructure in Amorphous Semiconductors.

Published online by Cambridge University Press:  26 February 2011

Karen K. Gleason ,
Mark A. Petrich  and
Jeffrey A. Reimer
Karen K. Gleason
Affiliation:
Dept. of Chemical Engineering, Univ. of California, Berkeley, CA 94720
Mark A. Petrich
Affiliation:
Dept. of Chemical Engineering, Univ. of California, Berkeley, CA 94720
Jeffrey A. Reimer
Affiliation:
Dept. of Chemical Engineering, Univ. of California, Berkeley, CA 94720
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Abstract

The effects of deposition parameters on the H microstructure of plasma deposited amorphous silicon (a-Si:H) and amorphous silicon carbide (a-SiC:H) are measured via multiple quantum nuclear magnetic resonance (MQ NMR). These studies indicate clusters of 5 to 7H atoms exist in a-Si:H films prepared at temperatures ranging from 113 to 324°C. In the range from 270 to 324°C, only these small clusters exist, but lower temperature films also contain larger clusters. Annealing studies indicate H rearranges in a-Si:H prior to evolution. Deposition temperature and annealing temperature have similar effects on H concentration in a-Si:H, but deposition temperature control the density and microstructure of the film. The addition of dopant atoms also affects the H microstructure, with phosphorous causing larger H clusters to form, and boron reducing clustering in a-Si:H films. This perturbation of the film's microstructure suggests that the effects of dopant addition are more complex in amorphous than in crystalline semiconductors. The concentration of carbon atoms also effects H microstructure of a-SiC:H in a complex way. We surmise that H microstructure, rather than H content, determines amorphous semiconductors properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 171
Copyright
Copyright © Materials Research Society 1987

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References

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