Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-03T08:39:49.543Z Has data issue: false hasContentIssue false
  • English
  • Français

Hydrogen Incorporation in Amorphous Silicon Prepared at High Deposition Rates by the VHF-GD Technique

Published online by Cambridge University Press:  25 February 2011

F. Finger ,
V. Viret ,
A. Shah ,
X.-M. Tang ,
J. Weber  and
W. Beyer
F. Finger
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, CH-2000 Neuchâtel, Switzerland
V. Viret
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, CH-2000 Neuchâtel, Switzerland
A. Shah
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, CH-2000 Neuchâtel, Switzerland
X.-M. Tang
Affiliation:
Institut de Physique, Université de Neuchâtel, CH-2000 Neuchâtel, Switzerland
J. Weber
Affiliation:
Institut de Physique, Université de Neuchâtel, CH-2000 Neuchâtel, Switzerland
W. Beyer
Affiliation:
Kernforschungsanlage Jülich GmbH, D-5170 Jülich, West-Germany.
Get access

Abstract

The influence of deposition temperature on hydrogen incorporation in a-Si:H prepared by VHF glow discharge at 70 MHz is investigated using hydrogen evolution, elastic recoil detection analysis and infrared spectroscopy.The films were further characterized by dark- and photoconductivity and by photothermal deflection spectroscopy. While the electronic film properties deteriorate in the usual manner with decreasing substrate temperature it is found that the total hydrogen content CH and the degree of microstructure that can be directly correlated to CH increase only moderately. It is concluded that a higher flux of low energy ions in the VHF plasma plays a key role in this context, possibly by increasing the surface mobility of the H atoms and thereby preventing the build-in of a large amount of hydrogen at low substrate temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 583
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Curtins, H., Wyrsch, N. and Shah, A., Electron.Lett. 23 (1987) 228 Google Scholar
Fischer, D., Tscharner, R., Ziegler, Y., Keppner, H. and Shah, A., Proceedings 9th E.C.Photovoltaic Solar Energy Conference, Freiburg, (1989) 995 Google Scholar
Chatham, H. and Bhat, P., Mat. Res. Soc. Symp. Proc. 149 (1989) 447 Google Scholar
4. Chatham, H., Bhat, P., Benson, A. and Matovich, C., J. Non-Cryst. Solids 115 (1989) 201 Google Scholar
5. Oda, S., Noda, J. and Matsumura, M., Mat. Res. Soc. Symp. Proc. 118 (1988) 117;Google Scholar
Jap. J. Appl. Physics 28 (1989) L1860Google Scholar
6. Prasad, K., Finger, F., Curtins, H., Shah, A. and Baumann, J., to be published in Proc. 1989 MRS Fall Meeting, Boston, 1989 Google Scholar
8. Curtins, H. and Favre, M., in Amorphous. Silicon And Related Materials, ed. Fritzsche, H. (World Scientific Publishing Company, Singapore, 1989) 329 Google Scholar
9. Brodsky, M.H., Cardona, M. and Cuomo, J.J., Phys. Rev. B 16 (1977) 3556 Google Scholar
10. Langford, A.A., Fleed, M.L. and Mahan, M.H., Solar Cells 27 (1989) 373 Google Scholar
11. Cardona, M., phys. stat. sol. (b) 118 (1983) 463 Google Scholar
12. Beyer, W. and Wagner, H., J. Non-Cryst. Solids 59&60 (1983) 161 Google Scholar
13. Tang, X.-M., Weber, J., Baer, Y. and Finger, F., Solid State Comm. 74 (1990) 171; to be published in Phys. Rev. B (1990)Google Scholar
14. Mahan, A.H., Raboisson, P. and Tsu, R., Appl. Phys. Lett. 50 (1987) 335 Google Scholar
15. Beyer, W., unpublishedGoogle Scholar
16. Ferreira, C.M. and Loureiro, J., J. Phys. D 17 (1984) 1175 Google Scholar
17. Wertheimer, M. R. and Moisan, M., J. Vac. Sci. Technol. A 3 (1985) 3634 Google Scholar
18. Moisan, M., Barbeau, C., Claude, R., Margot-Chaker, J. and Sauve, G., Comptes rendus des travaux du 7e Collogue international sur les plasma et la pulvérisation, et 5e Symposium international sur la gravure séche et le dépôt plasma en microéelectronique (Société française du vide), Antibes (1989) 148; to be publishedGoogle Scholar
19. Chapham, B., Glow Discharge Processes, (Wiley-Interscience, New York, 1980)Google Scholar
20. Stutzmann, M., Phil. Mag. B 60 (1989) 531 Google Scholar