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Hydrogen and Lithium Diffusion in Amorphous Silicon

Published online by Cambridge University Press:  01 January 1993

Wolfhard Beyer  and
Uwe Zastrow
Wolfhard Beyer
Affiliation:
ISI-PV, Forschungszentrum Juelich, D-5170 Juelich, Germany
Uwe Zastrow
Affiliation:
ISI-PV, Forschungszentrum Juelich, D-5170 Juelich, Germany
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Abstract

Diffusion processes of hydrogen and lithium in amorphous silicon are compared. While similarities in the diffusion energies and in a doping dependence exist, the charge state of the diffusing particles and the type of bonding of diffusing particles in traps differ. In case of Li diffusion, oxygen contamination plays an important role.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 285
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Beyer, W. and Fischer, R., Appl. Phys. Lett. 31, 850 (1977).Google Scholar
2. Zastrow, U., Beyer, W. and Herion, J., Anal, Fresenius Z.. Chem. (1993), to be published.Google Scholar
3. Pearton, S J., Corbett, J.W. and Borenstein, J.T., Physica B, 170, 85 (1991).Google Scholar
4. Pratt, B. and Friedman, F., J. Appl. Phys. 37, 1893 (1966).Google Scholar
5. Street, R.A., Tsai, C.C., Kakalios, J., and Jackson, W.B., Philos. Mag. 56, 305 (1987).Google Scholar
6. Beyer, W., Herion, J. and Wagner, H., J.Non-Cryst. Solids 114, 217 (1989).Google Scholar
7. Beyer, W., Herion, J., Wagner, H. and Zastrow, U., in Amorphous Silicon Technology- 1992. edited by Thompson, M.J., Hamakawa, Y., LeComber, P.G., Madan, A. and Schiff, E. (Mater. Res. Soc. Symp. Proc. 258, Pittsburgh, PA, 1992) pp. 437–442.Google Scholar
8. Beyer, W., in Tetrahedrally-Bonded Amorphous Semiconductors, edited by Adler, D. and Fritzsche, H., (Plenum, New York, 1985) pp. 129–146,.Google Scholar
9. Kennard, O., in CRC Handbook of Chemistry and Physics, edited by Weast, R. C.,(CRC, West Palm Beach, Florida, USA, 1977) pp. F-215–218 Google Scholar
10. Sol, N., Kaplan, D., Dieumegard, D., J. Non-Cryst. Solids 35–36, 291 (1980).Google Scholar
11. Reiss, F.H., Fuller, C.S. and Morin, F.J. ,Bell Tech. J. 35, 535 (1956).Google Scholar
12. Pierz, K., Stutzmann, M., Zollner, S., Beyer, W. and Billerty, C., J. Non-Cryst. Solids 137–138, 107 (1991)Google Scholar
13. Jackson, W.B. andAmer, N.M., Phys. Rev. B, 25, 5559 (1982).Google Scholar
14. Siffert, P. and Coche, A., in Semiconductor Detectors, edited by Bertolini, G. and Coche, A., (North-Holland ,Amsterdam, 1968) pp. 27–52.Google Scholar
15. Pell, E.M., J. Appl. Phys. 32, 1048 (1961).Google Scholar