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Hrteminvestigation of 90° Domain Configureuration and P-E Hysteresis Loop of Epitaxial PZT Multilayered Thin Films

Published online by Cambridge University Press:  11 February 2011

Takanori Kiguchi ,
Naoki Wakiya ,
Kazuo Shinozaki  and
Nobuyasu Mizutani
Takanori Kiguchi
Affiliation:
Center for Advanced Materials Analysis, Tokyo Institute of Technology, 2–12–1, O-okayama, Meguro-ku, Tokyo 152–8550, Japan
Naoki Wakiya
Affiliation:
Department of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2–12–1, O-okayama, Meguro-ku, Tokyo 152–8550, Japan
Kazuo Shinozaki
Affiliation:
Department of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2–12–1, O-okayama, Meguro-ku, Tokyo 152–8550, Japan
Nobuyasu Mizutani
Affiliation:
Center for Advanced Materials Analysis, Tokyo Institute of Technology, 2–12–1, O-okayama, Meguro-ku, Tokyo 152–8550, Japan Department of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2–12–1, O-okayama, Meguro-ku, Tokyo 152–8550, Japan
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Abstract

Multi-layered epitaxial Pb(Zrx,Ti1-x)O3 (PZT) films of x=0.2–0.5 were deposited on La0.5Sr0.5CoO3-x (LSCO)/ (001)STO and LSCO/CeO2/YSZ/(001)Si substrates with buffer layers. It was investigated how the 90° domain structure and the P-E hysteresis character depend on the difference of the thermal expansion coefficient by changing the Zr/Ti composition and the substrates, using HRTEM and XRD methods. XTEM analysis showed that usual lamella configuration of 90° domains of 8–30nm in width penetrated the columnar grain and the PZT layer in the PZT stacked film of Zr/Ti=20/80, 30/70, 40/60. On the other hand, the close-packed 90° domains of 4–5nm in width existed in a epitaxial columnar grain in the PZT50/50 stacked film. The P-E hysteresis loops of PZT20/80 stacked films deposited on STO and Si substrates show the remanent polarization of 2Pr=136μC/cm2, 2Pr=80μC/cm2, respectively. On the other hands, those of PZT50/50 stacked films deposited on STO and Si substrates show the polarization of 2Pr=125μC/cm2, 2Pr=36μC/cm2, respectively. Thus, the P-E hysteresis loop of PZT50/50 has remarkable difference of 2Pr between the substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 748: Symposium U – Ferroelectric Thin Films XI , 2002 , U5.1
Copyright
Copyright © Materials Research Society 2003

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