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HR XRD and Emission of InxGa1-xAs/GaAs quantum wells with embedded InAs quantum dots at the variation of InxGa1-xAs composition

Published online by Cambridge University Press:  19 November 2013

Leonardo G. Vega Macotela ,
Ricardo Cisneros Tamayo  and
Georgiy Polupan
Leonardo G. Vega Macotela
Affiliation:
ESIME– Instituto Politécnico Nacional, México D. F. 07738, México.
Ricardo Cisneros Tamayo
Affiliation:
ESIME– Instituto Politécnico Nacional, México D. F. 07738, México.
Georgiy Polupan
Affiliation:
ESIME– Instituto Politécnico Nacional, México D. F. 07738, México.
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Abstract

The high resolution X ray diffraction (HR-XRD) diagrams have been studied in the GaAs /InxGa1-xAs /In0.15Ga0.85As/GaAs quantum wells with embedded InAs quantum dots (QDs) in dependence on the composition of the capping InxGa1-xAs layers. The parameter x in capping InxGa1-xAs layers varied from the range 0.10-0.25. These technological changes have been accompanied by the variation non-monotonously of InAs QD emission. Numerical simulation of HR-XRD results has shown that the level of elastic strains and the composition of quantum layers vary none monotonously in studied QD structures. Simultaneously it was revealed that the process of Ga/In inter diffusion at the InxGa1-xAs/InAs QD interface are characterized by the dependence non monotonous versus parameter x in capping InxGa1-xAs layers. The physical reasons of the mentioned optical and structural effects in studied structures have been discussed.

Keywords

luminescenceInAs quantum dotsXRD
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1617: Symposium 7E – Low-Dimensional Semiconductor Structures , 2013 , pp. 13 - 18
Copyright
Copyright © Materials Research Society 2013 

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