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Hot-Wire Hydrogen Passivation of Polycrystalline Silicon TFT's

Published online by Cambridge University Press:  10 February 2011

N. Beldi ,
F. Le Bihan ,
K. Kis-Sion ,
M. Sarret ,
T. Mohammed-Brahim ,
F. Raoult ,
R. Rogel ,
J. Guillet  and
J. E. Bouree
N. Beldi
Affiliation:
GMV, UPRESA-CNRS 6076, Université Rennes 1, Campus de Beaulieu, 35042 Rennes Cedex, France
F. Le Bihan
Affiliation:
GMV, UPRESA-CNRS 6076, Université Rennes 1, Campus de Beaulieu, 35042 Rennes Cedex, France
K. Kis-Sion
Affiliation:
GMV, UPRESA-CNRS 6076, Université Rennes 1, Campus de Beaulieu, 35042 Rennes Cedex, France
M. Sarret
Affiliation:
GMV, UPRESA-CNRS 6076, Université Rennes 1, Campus de Beaulieu, 35042 Rennes Cedex, France
T. Mohammed-Brahim
Affiliation:
GMV, UPRESA-CNRS 6076, Université Rennes 1, Campus de Beaulieu, 35042 Rennes Cedex, France
F. Raoult
Affiliation:
GMV, UPRESA-CNRS 6076, Université Rennes 1, Campus de Beaulieu, 35042 Rennes Cedex, France
R. Rogel
Affiliation:
GMV, UPRESA-CNRS 6076, Université Rennes 1, Campus de Beaulieu, 35042 Rennes Cedex, France
J. Guillet
Affiliation:
LPICM, Ecole Polytechnique, UPR-CNRS 0258, 91128 Palaiseau Cedex, France
J. E. Bouree
Affiliation:
LPICM, Ecole Polytechnique, UPR-CNRS 0258, 91128 Palaiseau Cedex, France
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Abstract

Polysilicon N-channel TFT have been hydrogenated using the H2 dissociation on a hot tungsten filament. A post-annealing realized at the optimal temperature of 300°C is necessary to obtain interesting electrical TFT characteristics. Different TFT's sizes and geometries have been processed. The analysis of their characteristics shows that hydrogen preferentially diffuses through silicon oxide layer. The enhancement of the current in the ON-state shows that hydrogen atoms have passivated silicon oxide gate / polysilicon interface traps. The important reduction of the dependency of the OFF-state current with the reverse gate voltage shows that hydrogen atoms have passivated grain boundary traps near the interface in the channel region and in the drain sheet resistance region then reducing the trapped carrier emission.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 471: Symposium G – Flat Panel Display Materials III , 1997 , 143
Copyright
Copyright © Materials Research Society 1997

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References

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