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High-Spatial-Resolution Diffusion Length Measurements in Polycrystalline GaAs

Published online by Cambridge University Press:  15 February 2011

Robert M. Fletcher ,
D. Ken Wagner ,
G. W. Wicks  and
J. M. Ballantyne
Robert M. Fletcher
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY, 14853
D. Ken Wagner
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY, 14853
G. W. Wicks
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY, 14853
J. M. Ballantyne
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY, 14853
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Abstract

A technique for making rapidly-scanned, high-spatial resolution measurements of minority-carrier diffusion length is applied to the characterization of polycrystalline GaAs. Measurements on a large-grained n-type epitaxial layer show gradual variations of hole diffusion length from 0.1µm to l.lµm across the wafer as well as occasional small step changes at grain boundaries. By trading resolution for speed, the technique would be well suited to the nondestructive evaluation of large-area epitaxial layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 5: Symposium B – Grain Boundaries in Semiconductors , 1981 , 217
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

1. Lender, R. J., Tiwari, S., Borrego, J. M. and Ghandi, S. K., Solid State Electron, 22, 213 (1979).CrossRefGoogle Scholar
2. Fletcher, R. M., Wagner, D. K. and Ballantyne, J. M., Proc. 14th IEEE Photovoltaic Specialists Conf., San Diego, Calif. (Jan 7-10, 1980), pg. 1390.Google Scholar
3. Wagner, D. K., Fletcher, R. M. and Ballantyne, J. M., IEEE Trans. Electron Devices, ED– 27, 2213 (1980).CrossRefGoogle Scholar
4. Sell, D. D. and Casey, M. C. Jr., J. Appl. Phys., 45, 800 (1974).CrossRefGoogle Scholar