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High-Performance AlGaN-Based Visible-Blind Resonant Cavity Enhanced Schottky Photodiodes

Published online by Cambridge University Press:  01 February 2011

Ibrahim Kimukin ,
Necmi Biyikli ,
Tolga Kartaloglu ,
Orhan Aytür  and
Ekmel Ozbay
Ibrahim Kimukin
Affiliation:
Department of Physics, Bilkent University, Bilkent, Ankara 06800 TURKEY
Necmi Biyikli
Affiliation:
Department of Electrical and Electronics Engineering, Bilkent University, Bilkent, Ankara, 06800 TURKEY
Tolga Kartaloglu
Affiliation:
Department of Electrical and Electronics Engineering, Bilkent University, Bilkent, Ankara, 06800 TURKEY
Orhan Aytür
Affiliation:
Department of Electrical and Electronics Engineering, Bilkent University, Bilkent, Ankara, 06800 TURKEY
Ekmel Ozbay
Affiliation:
Department of Physics, Bilkent University, Bilkent, Ankara 06800 TURKEY
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Abstract

We have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/AlGaN Bragg mirror. The devices were fabricated using a microwave compatible fabrication process. Au and indium-tin-oxide (ITO) thin films were used for Schottky contact formation. ITO and Au-Schottky devices exhibited resonant peaks with 0.153 A/W and 0.046 A/W responsivity values at 337 nm and 350 nm respectively. Temporal high-speed measurements at 357 nm resulted in fast pulse responses with pulse widths as short as 77 ps. The fastest UV detector had a 3-dB bandwidth of 780 MHz.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 764: Symposium C – New Applications for Wide-Bandgap Semiconductors , 2003 , C3.22
Copyright
Copyright © Materials Research Society 2003

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