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Highly Scalable ALD-deposited Hafnium Silicate Gate Stacks for Low Standby Power Applications

Published online by Cambridge University Press:  01 February 2011

Johan Swerts ,
Wim Deweerd ,
Chang-gong Wang ,
Yanina Fedorenko ,
Annelies Delabie ,
Eric Shero ,
Chao Zhao ,
Jan Willem Maes ,
Stefan De Gendt  and
Glen Wilk
Johan Swerts
Affiliation:
[email protected], ASM Belgium, TCP, Kapeldreef 75, Leuven, Belgium, 3001, Belgium, +32 16 281617, +32 16 28 12 21
Wim Deweerd
Affiliation:
[email protected], IMEC vzw, Kapeldreef 75, Leuven, n/a, 3001, Belgium
Chang-gong Wang
Affiliation:
[email protected], ASM America, 3440 East University Drive, Phoenix, Arizona, 85034, United States
Yanina Fedorenko
Affiliation:
[email protected], ASM Belgium, Kapeldreef 75, Leuven, n/a, 3001, Belgium
Annelies Delabie
Affiliation:
[email protected], IMEC vzw, Kapeldreef 75, Leuven, n/a, 3001, Belgium
Eric Shero
Affiliation:
[email protected], ASM America, 3440 East University Drive, Phoenix, Arizona, 85034, United States
Chao Zhao
Affiliation:
[email protected], IMEC vzw, Kapeldreef 75, Leuven, n/a, 3001, Belgium
Jan Willem Maes
Affiliation:
[email protected], ASM Belgium, Kapeldreef 75, Leuven, n/a, 3001, Belgium
Stefan De Gendt
Affiliation:
[email protected], IMEC vzw, Kapeldreef 75, Leuven, n/a, 3001, Belgium
Glen Wilk
Affiliation:
[email protected], ASM America, 3440 East University Drive, Phoenix, Arizona, 85034, United States
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Abstract

The electrical performance of hafnium silicate (HfSiOx) gate stacks grown by atomic layer deposition (ALD) has been evaluated in capacitors and transistors. First, scaling potential of HfSiOx layers was studied as function of composition and thickness. It is shown that the equivalent oxide thickness scales down with decreasing layer thickness and increasing Hf-content. The gate leakage (at Vfb-1V), however, is mainly determined by the physical layer thickness. For the same equivalent oxide thickness (EOT) target, the lowest leakage is observed for the layers with the highest Hf-content. Leakage values as low as 1x10-3 A/cm2 for an equivalent oxide thickness of 1.3 nm have been obtained. Second, the thermal stability against crystallization of the ALD HfSiOx has been studied and related to their electrical properties. The thermal stability of HfSiOx decreases with increasing Hf-content that necessitates the use of nitridation. The influence of various annealing conditions on the nitrogen incorporation is also studied. Finally, the effect of HfSiOx composition and postdeposition nitridation is discussed on transistor level. TaN metal gate transistor data indicate that nitridation reduces the gate leakage and that Hf-rich HfSiOx layers show the best scaling potential, i.e., highest performance for the lowest gate leakage.

Keywords

atomic layer depositiondielectricelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 917: Symposium E – Gate Stack Scaling – Materials Selection, Role of Interfaces, and Reliability Implications , 2006 , 0917-E11-04
Copyright
Copyright © Materials Research Society 2006

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References

1 International Technology Roadmap for Semiconductors 2005.Google Scholar
2 Wilk, G. D. and Wallace, R.M., Appl. Phys. Lett. 74, 2854 (1999).Google Scholar
3 Takayanagi, M., Watanabe, T., Iijima, R., Koyama, M., Koike, M., Ino, T., Kamimuta, Y., Sekine, K., Eguchi, K., Nishiyama, A., Ishimaru, K., IEDM Tech. Dig. 882–885 (2005)Google Scholar
4 Snoeckx, K., Deweerd, W., Delabie, A., Elshocht, S. Van, and Gendt, S. De, Micro, March, 27 (2006).Google Scholar
5 Watanabe, K., Tatsumi, T., Togo, M. and Mogami, T., J. Appl. Phys. 90, 4701 (2001).Google Scholar
6 Kamiyama, S., Miura, T., and, Nara, Y.. J. Electrochem. Soc. 152, G903 (2005).Google Scholar
7 Pulsar® 2000 and Polygon® 8200 are trademarks of ASM International NV.Google Scholar
8 Zhao, C., Roebben, G., Young, E., Haukka, S., Bender, H., Houssa, M., Naili, M., Gendt, S. De, Heyns, M. and Biest, O. Van Der, Microelectronics Reliability 41 995–998 (2001).Google Scholar
9 Hauser, J.R. and Ahmed, K., AIP Conf. Proc. 449, 235 (1998).Google Scholar
10 Houssa, M., Bizzari, C. and Autran, J. L.. Appl. Phys. Lett. 83 5065 (2003).Google Scholar
11 Tsai, W., Ragnarsson, L., Chen, P.J., Onsia, B., Carter, R.J., Cartier, E., Young, E., Green, M., Caymax, M., Degendt, S., and Heyns, M., et.al., VLSI Tech. Dig., (2003).Google Scholar
12 Yeo, Y.-C., King, T.-J., and Hu, C.. Appl. Phys. Lett. 81, 2091 (2002).Google Scholar
13 Quevedo-Lopez, M.A., Chambers, J.J., Visokay, M.R., Shanware, A., and Colombo, L., Appl. Phys. Lett. 87, 012902 (2005) and references therein.Google Scholar