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Highly Conductive In4Sn3O12 Films Prepared by Pulsed Laser Deposition

Published online by Cambridge University Press:  01 February 2011

David H O'Neil ,
Vladimir Kuznetsov ,
Robert Jacobs ,
Martin O Jones  and
Peter P Edwards
David H O'Neil
Affiliation:
[email protected], University of Oxford, Inorganic Chemistry, South Parks Road, Oxford, OX1 3QR, United Kingdom, +44 1865 272643
Vladimir Kuznetsov
Affiliation:
[email protected], University of Oxford, Inorganic Chemistry, South Parks Road, Oxford, OX1 3RQ, United Kingdom
Robert Jacobs
Affiliation:
[email protected], University of Oxford, Surface Analysis Facility, Chemistry Research Laboratory, 12 Mansfield Road, Oxford, OX1 3TA, United Kingdom
Martin O Jones
Affiliation:
[email protected], University of Oxford, Inorganic Chemistry, South Parks Road, Oxford, OX1 3RQ, United Kingdom
Peter P Edwards
Affiliation:
[email protected], University of Oxford, Inorganic Chemistry, South Parks Road, Oxford, OX1 3RQ, United Kingdom
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Abstract

Highly conductive (> 103 Ω-1cm-1) and transparent (∼ 90%) In4Sn3O12 films have been deposited using pulsed laser deposition (PLD) on glass substrates held at a temperature of 500°C under varying pressures of oxygen (2.5 mTorr ≤ PO2 ≤ 15 mTorr). The crystallinity and the roughness of the films were found to increase with the pressure of oxygen used during deposition. Electron concentrations of the order of 5×1020 cm-3 and mobilities as high as 30 cm2V-1s-1 were derived from the measurement of Hall coefficients. Both the electronic transport and optical properties of the films were found to be strongly sensitive to the pressure of oxygen used during deposition.

Keywords

transparent conductoroptoelectroniclaser ablation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1102: Symposium LL – Energy Harvesting–From Fundamentals to Devices , 2008 , 1102-LL01-10
Copyright
Copyright © Materials Research Society 2008

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References

[1] Edwards, P. P.; Porch, A.; Jones, M. O.; Morgan, D. V.; Perks, R. M. Dalton Transactions., 2295 (2004).Google Scholar
[2] Kimizuka, N.; Isobe, M.; Nakamura, M. Journal of Solid State Chemistry, 116, 170 (1995).Google Scholar
[3] Nadaud, N.; Lequeux, N.; Nanot, M. Journal of Solid State Chemistry, 135, 140 (1998).10.1006/jssc.1997.7613Google Scholar
[4] Bates, J.L.; Griffin, C.W; Marchant, D.A; Garnier, J.E., American Ceramic Society Bulletin, 65 (1986).Google Scholar
[5] Minami, T.; Takeda, Y.; Takata, S.; Kakumu, T. Thin Solid Films, 13, 308, (1007).Google Scholar
[6] Minami, T.; Kakumu, T.; Shimokawak, K.; Takata, S. Thin Solid Films, 317, 319 (1998).Google Scholar
[7] Minami, Y.; Takeda, Y.; Takata, S.; Kakumu, T. Thin Solid Films, 308, 13 (1997).Google Scholar
[8] Otis, C. E.; Dreyfus, R. W. Physical Review Letters, 67, 2102 (1991).Google Scholar
[9] Choisnet, J.; Bizo, L.; Retoux, S.; Hebert, S.; Raveau, B. Journal of Solid State Chemistry, 177, 3748 (2004).Google Scholar
[10] van der Pauw, L. J. Philips Technical Review, 20 (1958/1959).Google Scholar
[11] Wu, X.; Coutts, T. J.; Mulligan, W. P. Journal of Vacuum Science and Technology A. 15 1057 (1997).10.1116/1.580429Google Scholar
[12] Film Wizard; 6.5.1 Scientific Computing International. (1999).Google Scholar
[13] Burstein, E.; Physical Review 93, 632, (1954).10.1103/PhysRev.93.632Google Scholar
[14] Moss, T. S.; Proceedings of the Physical Society, B 67 775 (1954).Google Scholar