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High Speed InAs/AlSb and In0.53Ga0.47As/AlAs Resonant Tunneling Diodes

Published online by Cambridge University Press:  25 February 2011

D. H. Chow ,
J. N. Schulman ,
E. ÖZBAY  and
D. M. Bloom
D. H. Chow
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Rd., Malibu, CA 90265
J. N. Schulman
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Rd., Malibu, CA 90265
E. ÖZBAY
Affiliation:
Edward L. Ginzton Laboratory, Stanford University, Stanford, CA 94305
D. M. Bloom
Affiliation:
Edward L. Ginzton Laboratory, Stanford University, Stanford, CA 94305
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Abstract

We report a comparison of InAs/AlSb and In0.53Ga0.47As/AlAs resonant tunneling diodes (RTDs) for high speed switching applications. Theoretical simulations are performed for both heterostructure systems using a two band tunneling model, which includes the effects of strain and band bending. Experimental peak current densities are observed to agree well with the calculated values over the range 1×104 A/cm2 to 5× 105 A/cm2. In both types of structures, the maximum peak current density (directly related to switching speed) is determined by device heating. In this regard, InAs/AlSb RTDs are found to be slightly superior to In0.53Ga0.47As/AlAs RTDs due to the low contact and series resistances of InAs. However, higher peak-to-valley ratios and swing voltages are obtained in the In0.53Ga0.47As/AlAs devices up to their maximum attainable peak current density (3.1×105 A/cm2 in this study). Both heterostructure systems yield RTDs with estimated switching times near 1 ps.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 269
Copyright
Copyright © Materials Research Society 1993

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References

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